About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IKW75N65SS5XKSA1


IGBT Trench Field Stop 650V 80A 395W Through Hole PG-TO247-3
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Infineon Availability : 585
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USD 8.1765

Multiples of: 1

        TO - 247 - 3Tube     Trenchstop 5
IKW75N65EL5XKSA1


Infineon Technologies IGBT Transistors 650V IGBT Trenchstop 5
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Infineon Availability : 582
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USD 4.9335

Multiples of: 1

Single650 V1.1 V20 V80 A100 nA  PG - TO 247 - 3TubeSiThrough Hole536 W- 40 C+ 175 CTrenchstop 5 L5
Hot IKW75N65ES5


IGBT Transistors Trenchstop 5 IGBT
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Infineon Availability : 580
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USD 3.1856

Multiples of: 1

Single650 V1.75 V+/- 2080 A100 nA  TO - 247 - 3TubeSiThrough Hole395 W- 40 C+ 175 CTrenchstop 5 S5
IGP50N60T


Transistor: IGBT; 600V; 50A; 333W; TO220-3
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Infineon Availability : 564
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USD 2.208

Multiples of: 1

      333 W         
IGB50N60T


Transistor: IGBT; 600V; 50A; 333W; D2PAK
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Infineon Availability : 547
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USD 2.6815

Multiples of: 1

      333 W         
IRG4BC30SPBF


IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT
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Infineon Availability : 536
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USD 2.0625

Multiples of: 1

Single600 V1.6 V+/- 20 V34 A100 nA100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C+ 150 C 
IKP10N60T


Transistor: IGBT; 600V; 10A; 110W; TO220AB
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Infineon Availability : 524
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USD 0.8441

Multiples of: 1

      110 W         
IKP30N65H5


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop 5
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Infineon Availability : 522
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USD 1.4835

Multiples of: 1

Single650 V1.65 V20 V55 A100 nA  TO - 220 - 3TubeSiThrough Hole188 W- 40 C+ 175 CTrenchstop 5 H5
IKA10N65ET6XKSA2


Transistor: IGBT; 650V; 9A; 20W; TO220FP; Series: T6
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Infineon Availability : 514
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USD 1.1845

Multiples of: 1

      20 W   Trenchstop 6    T6
IGP10N60TXKSA1


IGBT Transistors LOW LOSS IGBT TECH 600V 10A
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Infineon Availability : 512
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USD 0.7325

Multiples of: 1

Single600 V1.5 V+/- 20 V24 A100 nA  TO - 220 - 3TubeSiThrough Hole110 W- 40 C+ 175 CTrenchstop Igbt
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