IKP10N60T TRENCHSTOP Series p Low Loss DuoPack : IGBT in TRENCHSTOP and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: C Very low V 1.5V (typ.) CE(sat) Maximum Junction Temperature 175C Short circuit withstand time 5s Designed for : G E - Variable Speed Drive for washing machines, air conditioners and induction cooking - Uninterrupted Power Supply TRENCHSTOP and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) PG-TO220-3 Low EMI Low Gate Charge Very soft, fast recovery anti-parallel Emitter Controlled HE diode 1 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IKP10N60T TRENCHSTOP Series p Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 1.35 K/W t h J C junction case Diode thermal resistance, R 1.9 t h J C D junction case Thermal resistance, R 62 t h J A junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =0.2mA 600 - - V ( B R ) C E S GE C Collector-emitter saturation voltage V V = 15V, I =10A C E ( s a t ) GE C - 1.5 2.05 T =25 C j - 1.8 - T =175 C j Diode forward voltage V V =0V, I =10A F GE F T =25 C - 1.6 2.0 j - 1.6 - T =175 C j Gate-emitter threshold voltage V I =0.3mA,V =V 4.1 4.6 5.7 GE ( t h) C CE GE Zero gate voltage collector current I V =600V, A C E S CE V =0V GE T =25 C j - - 40 T =175 C j - - 1000 Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S CE GE Transconductance g V =20V, I =10A - 6 - S fs CE C Integrated gate resistor R none G i n t Dynamic Characteristic Input capacitance C V =25V, - 551 - pF i s s CE V =0V, Output capacitance C - 40 - o s s GE f=1MHz Reverse transfer capacitance C - 17 - r s s Gate charge Q V =480V, I =10A - 62 - nC G a t e CC C V =15V GE Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 1) Short circuit collector current I V =15V,t 5 s - 100 - A C ( S C ) GE SC V = 400V, C C T = 25 C j 1) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.6 11.05.2015 IFAG IPC TD VLS