About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGW30N60H3FKSA1


IGBT Transistors HOME APPLIANCES 14
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 2.0069
Multiples of: 1

                
IRGS6B60KDTRRP


IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT
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Infineon Availability : 0
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USD 2.0074
Multiples of: 800

                
SKB02N120


IGBT Transistors FAST IGBT NPT TECH 1200V 2A
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USD 2.016
Multiples of: 1

Single1200 V +/- 20 V    TO - 263 - 3Cut TapeSiSmd/Smt - 55 C+ 150 CSkb02n120
AUIRG4BC30U-S


IGBT Transistors 600V AUTO ULTRAFAST 8-60KHZ DSCRETE IGBT
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USD 2.0301
Multiples of: 1

Single600 V1.95 V+/- 20 V23 A  Aec - Q101DPAK - 3TubeSiSmd/Smt100 W- 55 C  
IRGS4630DPBF


Trans IGBT Chip N-CH 600V 47A 3-Pin(2+Tab) D2PAK Tube
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USD 2.0335
Multiples of: 50

Single        Rail/Tube      
IRG4PC30UDPBF


International Rectifier IGBT Transistors 600V ULTRAFAST 8-60 KHZ COPACK IGBT
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USD 2.0576
Multiples of: 1

Single600 V2.1 V+/- 20 V23 A 100 W TO - 247TubeSiThrough Hole100 W- 55 C+ 150 C 
IRG7SC12FPBF


Transistor: IGBT; 600V; 24A; 69W; D2PAK
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USD 2.0763
Multiples of: 1

      69 W         
IRG4BC30FD-SPBF


International Rectifier IGBT Transistors 600V HYPERFAST 1-8 KHZ CO-PACK IGBT
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USD 2.0903
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Single600 V1.8 V+/- 20 V31 A   D - PAK - 3TubeSiSmd/Smt100 W- 55 C+ 150 C 
IRGP4630DPBF


IGBT Transistors 600V TRENCH IGBT ULTRAFAST
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USD 2.0995
Multiples of: 1

Single600 V2.15 V+/- 20 V47 A100 nA206 W TO - 247AC - 3BulkSiThrough Hole206 W- 40 C+ 175 C 
IRGP20B60PDPBF


Transistor: IGBT; 600V; 40A; 220W; TO247-3
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Infineon Availability : 0
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USD 2.101
Multiples of: 25

Single600 V2.35 V+/- 20 V40 A 220 W TO - 247TubeSiThrough Hole220 W- 55 C  
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