X-On Electronics has gained recognition as a prominent supplier of SKB02N120 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. SKB02N120 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

SKB02N120 Infineon

SKB02N120 electronic component of Infineon
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Part No.SKB02N120
Manufacturer: Infineon
Category: IGBT Transistors
Description: IGBT Transistors FAST IGBT NPT TECH 1200V 2A
Datasheet: SKB02N120 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.7683 ea
Line Total: USD 3.77 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 3.7683
10 : USD 3.1743
25 : USD 3.0046
100 : USD 2.6291
250 : USD 2.4309
500 : USD 2.2912
1000 : USD 1.9656
2000 : USD 1.9539

   
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RoHS - XON
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Collector- Emitter Voltage VCEO Max
Maximum Gate Emitter Voltage
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Technology
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Technology
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
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We are delighted to provide the SKB02N120 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SKB02N120 and other electronic components in the IGBT Transistors category and beyond.

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SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode Allowed number of short circuits: <1000 time between C short circuits: >1s. lower E compared to previous generation off Short circuit withstand time 10 s G E Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour PG-TO-263-3-2 - parallel switching capability Pb-free lead plating RoHS compliant 1 Qualified according to JEDEC for target applications Complete product spectrum and PSpice Models : SKB02N120 Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic R IGBT thermal resistance, 2.0 K/W t h J C junction case Diode thermal resistance, R 4.5 t h J C D junction case Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. typ. max. Static Characteristic Collector-emitter breakdown voltage V 1200 - - V V =0V, I =100 A ( B R ) C E S G E C Collector-emitter saturation voltage V V = 15V, I =2A C E ( s a t ) G E C T =25 C 2.5 3.1 3.6 j - 3.7 4.3 T =150 C j Diode forward voltage V V =0V, I =2A F G E F 2.0 2.5 T =25 C j - 1.75 T =150 C j Gate-emitter threshold voltage V 3 4 5 I =100 A,V =V G E ( t h) C C E G E Zero gate voltage collector current I V =1200V,V =0V C E S C E G E A - - 25 T =25 C j - - 100 T =150 C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA G E S C E G E Transconductance g V =20V, I =2A 1.5 - S f s C E C Dynamic Characteristic Input capacitance C V =25V, - 205 250 pF i s s C E Output capacitance C V =0V, - 28 34 G E o s s f=1MHz Reverse transfer capacitance C - 12 15 r s s Gate charge Q V =960V, I =2A - 11 - nC G a t e C C C V =15V G E Internal emitter inductance L - 7 - nH E measured 5mm (0.197 in.) from case 2) Short circuit collector current I - 24 - A V =15V,t 10 s C ( S C ) G E S C 100V V 1200V, C C T 150 C j 2) Allowed number of short circuits: <1000 time between short circuits: >1s. 2 Rev. 2.4 12.06.2013

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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