SMPS IGBT IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C V = 600V CES Applications V typ. = 2.05V CE(on) Telecom and Server SMPS V = 15V I = 13.0A GE C PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Equivalent MOSFET Consumer Electronics Power Supplies G Parameters Lead-Free R typ. = 158m CE(on) E Features I (FET equivalent) = 20A D NPT Technology, Positive Temperature Coefficient n-channel Lower V (SAT) CE Lower Parasitic Capacitances Minimal Tail Current HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode Tighter Distribution of Parameters Higher Reliability E Benefits C Parallel Operation for Higher Current Applications G Lower Conduction Losses and Switching Losses Higher Switching Frequency up to 150kHz TO-247AC Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 40 C C I T = 100C Continuous Collector Current 22 C C Pulse Collector Current (Ref. Fig. C.T.4) 80 I CM Clamped Inductive Load Current I 80 A LM I T = 25C Diode Continous Forward Current 31 F C I T = 100C Diode Continous Forward Current 12 F C Maximum Repetitive Forward Current I 42 FRM V Gate-to-Emitter Voltage 20 V GE Maximum Power Dissipation 220 W P T = 25C D C P T = 100C Maximum Power Dissipation 86 D C T Operating Junction and -55 to +150 J Storage Temperature Range C T STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.58 C/W JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 2.5 JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA Weight 6 (0.21)g (oz) IRGP20B60PDPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 500A (BR)CES GE C V /T V = 0V, I = 1mA (25C-125C) (BR)CES J Temperature Coeff. of Breakdown Voltage 0.32 V/C GE C R Internal Gate Resistance 4.3 1MHz, Open Collector G I = 13A, V = 15V 4, 5,6,8,9 2.05 2.35 C GE V = 20A, V = 15V Collector-to-Emitter Saturation Voltage 2.50 2.80 V I CE(on) C GE 2.65 3.00 I = 13A, V = 15V, T = 125C C GE J 3.30 3.70 I = 20A, V = 15V, T = 125C C GE J V I = 250A Gate Threshold Voltage 3.0 4.0 5.0 V 7,8,9 GE(th) C V /TJ Threshold Voltage temp. coefficient -11 mV/C V = V , I = 1.0mA GE(th) CE GE C V = 50V, I = 40A, PW = 80s gfe Forward Transconductance 19 S CE C I Collector-to-Emitter Leakage Current 1.0 250 A V = 0V, V = 600V CES GE CE 0.1 mA V = 0V, V = 600V, T = 125C GE CE J V I = 12A, V = 0V Diode Forward Voltage Drop 1.4 1.7 V 10 FM F GE 1.3 1.6 I = 12A, V = 0V, T = 125C F GE J I Gate-to-Emitter Leakage Current 100 nA V = 20V, V = 0V GES GE CE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Qg Total Gate Charge (turn-on) 68 102 I = 13A 17 C Q Gate-to-Collector Charge (turn-on) 24 36 nC V = 400V CT1 gc CC Q Gate-to-Emitter Charge (turn-on) 10 15 V = 15V ge GE I = 13A, V = 390V E Turn-On Switching Loss 95 140 CT3 on C CC E Turn-Off Switching Loss 100 145 J V = +15V, R = 10, L = 200H off GE G E T = 25C Total Switching Loss 195 285 total J t Turn-On delay time 20 26 I = 13A, V = 390V CT3 d(on) C CC t Rise time 5.0 7.0 ns V = +15V, R = 10, L = 200H r GE G t T = 25C Turn-Off delay time 115 135 d(off) J t Fall time 6.0 8.0 f E Turn-On Switching Loss 165 215 I = 13A, V = 390V CT3 on C CC E V = +15V, R = 10, L = 200H Turn-Off Switching Loss 150 195 J 11,13 off GE G E Total Switching Loss 315 410 T = 125C WF1,WF2 total J t I = 13A, V = 390V CT3 Turn-On delay time 19 25 d(on) C CC t Rise time 6.0 8.0 ns V = +15V, R = 10 , L = 200H 12,14 r GE G t Turn-Off delay time 125 140 T = 125C WF1,WF2 d(off) J t f Fall time 13 17 C Input Capacitance 1570 V = 0V 16 ies GE C Output Capacitance 130 V = 30V oes CC C Reverse Transfer Capacitance 20 pF f = 1Mhz res Effective Output Capacitance (Time Related) C eff. 94 V = 0V, V = 0V to 480V 15 oes GE CE Effective Output Capacitance (Energy Related) C eff. (ER) 76 oes T = 150C, I = 80A 3 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 480V, Vp =600V CT2 CC Rg = 22, V = +15V to 0V GE t T = 25C I = 12A, V = 200V, Diode Reverse Recovery Time 42 60 ns 19 rr J F R 80 120 T = 125C di/dt = 200A/s J Q T = 25C I = 12A, V = 200V, Diode Reverse Recovery Charge 80 180 nC 21 rr J F R 220 600 T = 125C di/dt = 200A/s J I Peak Reverse Recovery Current 3.5 6.0 A T = 25C I = 12A, V = 200V, 19,20,21,22 rr J F R T = 125C 5.6 10 di/dt = 200A/s CT5 J Notes: R typ. = equivalent on-resistance = V typ. / I , where V typ. = 2.05V and I = 13A. I (FET Equivalent) is the equivalent MOSFET I rating 25C for CE(on) CE(on) C CE(on) C D D applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions. V = 80% (V ), V = 15V, L = 28H, R = 22. CC CES GE G Pulse width limited by max. junction temperature. Energy losses includetai and diode reverse recovery. Data generated with use of Diode 8ETH06. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oes oes CE CES C eff.(ER) is a fixed capacitance that stores the same energy as C while V is rising from 0 to 80% V . oes oes CE CES 2 www.irf.com