About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG4PC30FDPBF


Transistor: IGBT; 600V; 31A; 100W; TO247-3
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USD 2.4448

Multiples of: 1

Single600 V1.8 V+/- 20 V31 A 100 W TO - 247TubeSiThrough Hole100 W- 55 C  
IRG4IBC30FDPBF


IGBT Transistors 600V Fast 1-8kHz
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Infineon Availability : 0
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USD 2.4505

Multiples of: 1

Single600 V1.8 V+/- 20 V20.3 A 45 W TO - 220FP - 3Tube Through Hole - 55 C  
IKW40N60DTPXKSA1


Transistor: IGBT; 600V; 48A; 123W; TO247-3
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Infineon Availability : 0
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USD 2.4706

Multiples of: 1

      123 W   Trenchstop     
IGZ50N65H5


Transistor: IGBT; 650V; 54A; 136W; TO247-4; Series: H5
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USD 2.4719

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      136 W   Trenchstop 5    H5
IRGS15B60KDPBF


IGBT Transistors 600V ULTRAFAST 10-30KHZ COPACK IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 2.4743

Multiples of: 400

Single600 V2.2 V+/- 20 V31 A100 nA139 W D2PAKTubeSiSmd/Smt139 W- 55 C+ 150 C 
IRG4BC30KDPBF


Transistor: IGBT; 600V; 28A; 100W; TO220AB
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 2.5

Multiples of: 1

Single600 V2.7 V+/- 20 V28 A100 nA100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C+ 150 C 
IRG4PC50SDPBF


IGBT Transistors 600V ULTRAFAST COPACK IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 2.5

Multiples of: 1

Single600 V1.36 V+/- 20 V70 A   TO - 247 - 3TubeSiThrough Hole200 W- 55 C  
IKB20N60TA


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 0
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USD 2.5009

Multiples of: 1

Single600 V1.5 V+/- 20 V41 A100 nA  TO - 263 - 3ReelSiSmd/Smt166 W- 40 C+ 175 CIkb20n60
IKB20N60TAATMA1


Infineon Technologies IGBT Transistors IGBT PRODUCTS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 0
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USD 2.5009

Multiples of: 1

Single600 V1.5 V20 V40 A100 nA  TO - 263 - 3ReelSiSmd/Smt156 W- 40 C+ 150 CXkb20n60
IRG7PH30K10DPBF


Transistor: IGBT; 1200V; 30A; 180W; TO247-3
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Infineon Availability : 0
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USD 2.5162

Multiples of: 1

      180 W         
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