IRG7PH30K10DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C Low V Trench IGBT Technology CE (ON) V = 1200V CES Low switching losses 10 S short circuit SOA I = 16A, T = 100C C C Square RBSOA 100% of the parts tested for I LM G t 10s, T = 150C SC J(max) Positive V Temperature co-efficient CE (ON) Ultra fast soft Recovery Co-Pak Diode E V typ. = 2.05V CE(on) Tight parameter distribution n-channel Lead Free Package C Benefits High Efficiency in a wide range of applications E Suitable for a wide range of switching frequencies due to C G Low V and Low Switching losses CE (ON) Rugged transient Performance for increased reliability Excellent Current sharing in parallel operation TO-247AC GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 1200 V CES Continuous Collector Current 30 I T = 25C C C I T = 100C Continuous Collector Current 16 C C Nominal Current 9.0 I NOMINAL I Pulse Collector Current, Vge = 15V 27 A CM Clamped Inductive Load Current, Vge = 20V 36 I LM I T = 25C Diode Continous Forward Current 30 F C I T = 100C Diode Continous Forward Current 16 F C Diode Maximum Forward Current I 36 FM V Continuous Gate-to-Emitter Voltage 30 V GE P T = 25C Maximum Power Dissipation 180 W D C P T = 100C Maximum Power Dissipation 71 D C Operating Junction and -55 to +150 T J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.70 JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 1.44 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 08/14/09IRG7PH30K10DPbF Electrical Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 1200 V V = 0V, I = 250A CT6 (BR)CES GE C V / T V = 0V, I = 1mA (25C-150C) CT6 (BR)CES J Temperature Coeff. of Breakdown Voltage 1.11 V/C GE C V Collector-to-Emitter Saturation Voltage 2.05 2.35 I = 9.0A, V = 15V, T = 25C 5,6,7 CE(on) C GE J 2.56 V I = 9.0A, V = 15V, T = 150C 9,10,11 C GE J V V = V , I = 400A Gate Threshold Voltage 5.0 7.5 V 9,10 GE(th) CE GE C V / TJ Threshold Voltage temp. coefficient -15 mV/C V = V , I = 400A (25C - 150C) 11,12 GE(th) CE GE C V = 50V, I = 9.0A, PW = 80s gfe Forward Transconductance 6.2 S CE C I Collector-to-Emitter Leakage Current 1.0 25 A V = 0V, V = 1200V CES GE CE 400 V = 0V, V = 1200V, T = 150C GE CE J V I = 9.0A FM Diode Forward Voltage Drop 2.0 3.0 V F 8 2.1 I = 9.0A, T = 150C F J I Gate-to-Emitter Leakage Current 100 nA V = 30V GES GE Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig Q I = 9.0A 24 Total Gate Charge (turn-on) 45 68 g C Q Gate-to-Emitter Charge (turn-on) 8.7 13 nC V = 15V CT1 ge GE Q Gate-to-Collector Charge (turn-on) 20 30 V = 600V gc CC E I = 9.0A, V = 600V, V = 15V Turn-On Switching Loss 530 760 CT4 on C CC GE E Turn-Off Switching Loss 380 600 J R = 22 , L = 1.0mH, L = 150nH, T = 25C off G S J E Energy losses include tail & diode reverse recovery Total Switching Loss 910 1360 total t Turn-On delay time 14 31 I = 9.0A, V = 600V, V = 15V CT4 d(on) C CC GE t Rise time 24 41 ns R = 22 , L = 1.0mH, L = 150nH, T = 25C r G S J t Turn-Off delay time 110 130 d(off) t Fall time 38 56 f E Turn-On Switching Loss 810 I = 9.0A, V = 600V, V =15V 13,15 on C CC GE E R =22 , L=1.0mH, L =150nH, T = 150C Turn-Off Switching Loss 680 J CT4 off G S J E Total Switching Loss 1490 Energy losses include tail & diode reverse recovery WF1, WF2 total t Turn-On delay time 11 I = 9.0A, V = 600V, V = 15V 14,16 d(on) C CC GE t R = 22 , L = 1.0mH, L = 150nH CT4 Rise time 23 ns r G S t Turn-Off delay time 130 T = 150C WF1 d(off) J t Fall time 260 WF2 f C V = 0V Input Capacitance 1070 pF 23 ies GE C Output Capacitance 63 V = 30V oes CC C Reverse Transfer Capacitance 26 f = 1.0Mhz res T = 150C, I = 36A 4 J C RBSOA Reverse Bias Safe Operating Area FULL SQUARE V = 960V, Vp =1200V CT2 CC Rg = 22 , V = +20V to 0V GE SCSOA Short Circuit Safe Operating Area 10 s T = 150C, V = 600V, Vp =1200V 22, CT3 J CC Rg = 22 , V = +15V to 0V WF4 GE Erec Reverse Recovery Energy of the Diode 710 J T = 150C 17,18,19 J t Diode Reverse Recovery Time 140 ns V = 600V, I = 9.0A 20,21 rr CC F I V = 15V, Rg = 20 , L =1.0mH, L = 150nH WF3 rr Peak Reverse Recovery Current 12 A GE s Notes: V = 80% (V ), V = 20V, L = 36H, R = 33 . CC CES GE G Pulse width limited by max. junction temperature. Refer to AN-1086 for guidelines for measuring V safely. (BR)CES R is measured at T of approximately 90C. J 2 www.irf.com