7* 809 : C % & ()&* + = , G - , ./012 E n-channel / 3 % % - 3 C & ()&* % 3 4 5 , % 6 -- E C G TO-247AC GC E Gate Collector Emitter Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Breakdown Voltage 600 V CES I T = 25C Continuous Collector Current 70 C C I T = 100C Continuous Collector Current 41 C C Pulsed Collector Current I 140 CM Clamped Inductive Load Current 140 A I LM Diode Continous Forward Current 25 I T = 100C F C Diode Maximum Forward Current I 280 FM V Continuous Gate-to-Emitter Voltage 20 V GE P T = 25C Maximum Power Dissipation 200 W D C P T = 100C Maximum Power Dissipation 78 D C Operating Junction and -55 to +150 T J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units R (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) 0.64 JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 0.83 C/W JC R Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com /6 :6 < Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions Ref.Fig V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 250A (BR)CES GE C V / T Temperature Coeff. of Breakdown Voltage 0.75 V/C V = 0V, I = 1mA (25C-150C) (BR)CES J GE C I = 41A, V = 15V, T = 25C 1.28 1.36 2 C GE J V Collector-to-Emitter Saturation Voltage 1.62 V I = 80A, V = 15V, T = 25C CE(on) C GE J I = 41A, V = 15V, T = 150C 1.25 C GE J V Gate Threshold Voltage 3.0 6.0 V V = V , I = 250A 3 GE(th) CE GE C V / TJ Threshold Voltage temp. coefficient -9.3 mV/C V = V , I = 250A (25C - 150C) GE(th) CE GE C V = 100V, I = 41A gfe Forward Transconductance 17 34 S CE C V = 0V, V = 600V 250 GE CE I Collector-to-Emitter Leakage Current 2.0 A V = 0V, V = 10V, T = 25C CES GE CE J V = 0V, V = 600V, T = 150C 1000 GE CE J V Diode Forward Voltage Drop 1.3 1.7 V I = 25A 13 FM F 1.2 1.5 I = 25A, T = 150C F J I V = 20V Gate-to-Emitter Leakage Current 100 nA GES GE Switching Characteristics T = 25C (unless otherwise specified) J Ref.Fig Parameter Min. Typ. Max. Units Conditions Q Total Gate Charge (turn-on) 180 280 I = 41A 8 g C Q V = 15V Gate-to-Emitter Charge (turn-on) 24 37 nC ge GE Q Gate-to-Collector Charge (turn-on) 61 92 V = 400V gc CC E Turn-On Switching Loss 0.72 I = 41A, V = 480V, V = 15V 18a, 18b on C CC GE E R = 5.0 , T = 25C 18c off Turn-Off Switching Loss 8.27 mJ G J E Total Switching Loss 8.99 13 Energy losses include tail & diode reverse recovery total t Turn-On delay time 33 I = 41A, V = 480V, V = 15V 18a, 18b d(on) C CC GE t R = 5.0 , L = 200H, T = 25C 18c Rise time 30 ns r G J t Turn-Off delay time 650 980 d(off) t Fall time 400 600 f E Total Switching Loss 15 mJ total t Turn-On delay time 31 I = 41A, V = 480V, V = 15V 18a, 18b d(on) C CC GE t Rise time 31 ns R = 5.0 , L = 200H 18c r G t T = 150C Turn-Off delay time 1080 d(off) J t Fall time 620 f C V = 0V 7 Input Capacitance 4100 pF ies GE C Output Capacitance 250 V = 30V oes CC C Reverse Transfer Capacitance 48 f = 1.0Mhz res t T = 25C, V = 200V, I = 25A, di/dt=200A/s Diode Reverse Recovery Time 50 75 ns 14 rr J R F 105 160 T = 125C, V = 200V, I = 25A, di/dt=200A/s 18a, 18d J R F I Peak Reverse Recovery Current 4.5 10 A T = 25C, V = 200V, I = 25A, di/dt=200A/s 15 rr J R F 8.0 15 T = 125C, V = 200V, I = 25A, di/dt=200A/s 18a, 18d J R F Q T = 25C, V = 200V, I = 25A, di/dt=200A/s 16 Peak Reverse Recovery Current 112 375 nC rr J R F T = 125C, V = 200V, I = 25A, di/dt=200A/s 18a, 18d 420 1200 J R F di /dt Peak Rate of Fall of Recovery During t T = 25C, V = 200V, I = 25A, di/dt=200A/s 250 A/s 17 (rec)M b J R F 160 T = 125C, V = 200V, I = 25A, di/dt=200A/s J R F = ) > >A % -, B C 4 . > < > + > >+ ) 4 . 8 7 % < D A , 4 E 2 www.irf.com