About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IRG4BC40FPBF


Transistor: IGBT; 600V; 49A; 160W; TO220AB
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USD 3.6293
Multiples of: 1

Single600 V1.7 V+/- 20 V49 A 160 W TO - 220 - 3TubeSiThrough Hole160 W- 55 C  
IHW30N120R3


Infineon Technologies IGBT Transistors IGBT PRODUCTS TrenchStop RC
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USD 3.6502
Multiples of: 1

Single1200 V1.55 V+/- 20 V60 A100 nA  TO - 247 - 3TubeSiThrough Hole349 W- 40 C+ 175 CRc
IRG4PC40UD-EPBF


IGBT Transistors 600V UltraFast 8-60kHz
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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USD 3.652
Multiples of: 1

Single600 V2.1 V+/- 20 V40 A100 nA160 W TO - 247TubeSiThrough Hole160 W- 55 C+ 150 C 
IRGP4760PBF


Transistor: IGBT; 650V; 90A; 325W; TO247-3
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USD 3.6528
Multiples of: 123

      325 W         
IHW30N160R2


Transistor: IGBT; 1600V; 30A; 312W; TO247-3
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USD 3.6537
Multiples of: 1

      312 W         
SGP07N120


IGBT Transistors FAST IGBT NPT TECH 1200V 8A
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USD 3.6848
Multiples of: 1

Single1200 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CSgp07n120
IRG7PH35UD1MPBF


Transistor: IGBT; 1200V; 50A; 179W; TO247-3
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USD 3.6886
Multiples of: 122

      179 W         
IRG4PH40KDPBF


Transistor: IGBT; 1200V; 15A; 160W; TO247-3
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USD 3.731
Multiples of: 4

      160 W         
IKZ75N65NH5XKSA1


Transistor: IGBT; 650V; 75A; 197W; TO247-4; Series: H5
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USD 3.7417
Multiples of: 1

      197 W   Trenchstop 5    H5
IRG4PH40UD-EPBF


IGBT Transistors 1200V UltraFast 5-40kHz
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Infineon Availability : 0
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USD 3.7504
Multiples of: 1

Single1.2 kV3.5 V+/- 20 V30 A100 nA160 W TO - 247TubeSiThrough Hole160 W- 55 C+ 150 C 
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