IHW30N160R2 Soft Switching Series TrenchStop Reverse Conducting (RC-)IGBT with monolithic body diode C Features: Powerful monolithic Body Diode with very low forward voltage Body diode clamps negative voltages Trench and Fieldstop technology for 1600 V applications offers : G E - very tight parameter distribution - high ruggedness, temperature stable behavior NPT technology offers easy parallel switching capability due to positive temperature coefficient in V CE(sat) Low EMI 1 PG-TO-247-3 Qualified according to JEDEC for target applications Pb-free lead plating RoHS compliant Complete product spectrum and PSpice Models : IHW30N160R2 Soft Switching Series Thermal Resistance Parameter Symbol Conditions Max. Value Unit Characteristic IGBT thermal resistance, R 0.48 thJC junction case Diode thermal resistance, R 0.48 K/W thJCD junction case Thermal resistance, R 40 thJA junction ambient Electrical Characteristic, at T = 25 C, unless otherwise specified j Value Parameter Symbol Conditions Unit min. Typ. max. Static Characteristic Collector-emitter breakdown voltage V V =0V, I =500 A 1600 - - (BR)CES GE C Collector-emitter saturation voltage V V = 15V, I =30A CE(sat) GE C - 1.8 2.1 T =25C j - 2.25 - T =150C j - 2.35 - T =175C j V Diode forward voltage V V =0V, I =30A F GE F T =25C - 1.65 2.0 j - 2.0 - T =150C j - 2.0 - T =175C j Gate-emitter threshold voltage V I =0.75mA, 5.1 5.8 6.4 GE(th) C V =V CE GE Zero gate voltage collector current I V =1600V, CES CE V =0V GE A - - 5 T =25C j - - 2500 T =175C j Gate-emitter leakage current I V =0V,V =20V - - 100 nA GES CE GE Transconductance g V =20V, I =30A - 22.5 - S fs CE C Integrated gate resistor R none Gint 2 Rev. 2.1 Nov 09 Power Semiconductors