About IGBT Transistors

Infineon IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
SGP15N120


IGBT Transistors FAST IGBT NPT TECH 1200V 15A
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USD 3.7586
Multiples of: 1

Single1200 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CSgp15n120
IRGP6660DPBF


IGBT Transistors 600V UltraFast IGBT TO-247
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USD 3.7612
Multiples of: 1

Single600 V1.65 V20 V95 A100 nA  TO - 247AC - 3TubeSiThrough Hole330 W- 40 C+ 175 C 
IEWS20R5135IPBXKLA1


IGBT Transistors HOME APPLIANCES 14
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USD 3.7659
Multiples of: 400

Single1350 V1.65 V20 V40 A   TO - 247 - 6Tube Through Hole288 W- 40 C+ 125 C 
SGB15N120ATMA1


IGBT Transistors INDUSTRY 14
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USD 3.7764
Multiples of: 1000

                
IRGP4640D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT 40A 250W 75nC
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USD 3.7964
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Single600 V1.9 V20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole125 W- 55 C+ 175 CTrenchstop
IRGP6650D-EPBF


International Rectifier IGBT Transistors 600V UltraFast IGBT TO-247
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Infineon Availability : 0
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USD 3.8109
Multiples of: 1

Single600 V1.65 V20 V80 A100 nA  TO - 247AD - 3TubeSiThrough Hole306 W- 40 C+ 175 C 
IRG4PH50KPBF


IGBT Transistors 1200V ULTRAFAST 4-20KHZ DSCRETE IGBT
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USD 3.8189
Multiples of: 1

Single1.2 kV3.5 V+/- 20 V45 A   TO - 247 - 3Tube Through Hole200 W- 55 C+ 150 C 
IRG7PH35UD1-EP


International Rectifier IGBT Transistors
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USD 3.822
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 1.2 kV2.2 V 50 A   TO - 247 - 3TubeSiThrough Hole179 W   
IKZA40N65RH5XKSA1


IGBT Trench Field Stop 650V 74A 250W Through Hole PG-TO247-4-3
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USD 3.864
Multiples of: 1

        TO - 247 - 4Tube     Trenchstop 5
IRGP35B60PDPBF


Transistor: IGBT; 600V; 40A; 308W; TO247-3
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USD 3.8767
Multiples of: 1

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