IRGP6650DPbF IRGP6650D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode V = 600V C CES C C I = 50A, T =100C C C E t 5s, T = 175C G SC J(max) E C C G G E V typ. = 1.65V IC = 35A CE(ON) IRGP6650DPbF IRGP6650DEPbF n-channel TO247AC TO247AD Applications G C E Welding Gate Collector Emitter H Bridge Converters Features Benefits Low V and Switching Losses High Efficiency in a Wide Range of Applications CE(ON) Optimized Diode for Full Bridge Hard Switch Converters Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Square RBSOA and Maximum Temperature of 175C Performance and High Power Capability 5s Short Circuit Enables Short Circuit Protection Operation Positive V Temperature Co-efficient Excellent Current Sharing in Parallel Operation CE (ON) Lead-free, RoHS compliant Environmentally friendly Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRGP6650DPbF TO-247AC Tube 25 IRGP6650DPbF IRGP6650D-EPbF TO-247AD Tube 25 IRGP6650D-EPbF Absolute Maximum Ratings Parameter Max. Units V Collector-to-Emitter Voltage 600 V CES I T = 25C Continuous Collector Current 80 C C I T = 100C Continuous Collector Current 50 C C I Pulse Collector Current, V = 15V 105 CM GE A I Clamped Inductive Load Current, V = 20V 140 LM GE I T = 100C Diode Repetitive Peak Forward Current 25 FRM C I Diode Maximum Forward Current 140 FM V Continuous Gate-to-Emitter Voltage 20 GE V P T = 25C Maximum Power Dissipation 306 D C W P T = 100C Maximum Power Dissipation 153 D C T Operating Junction and -40 to +175 J T Storage Temperature Range C STG Soldering Temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Thermal Resistance Parameter Min. Typ. Max. Units Thermal Resistance Junction-to-Case-(each IGBT) 0.49 R (IGBT) JC R (Diode) Thermal Resistance Junction-to-Case-(each Diode) 3.35 JC C/W Thermal Resistance, Case-to-Sink (flat, greased surface) 0.24 R CS R Thermal Resistance, Junction-to-Ambient (typical socket mount) 40 JA 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 14, 2014 IRGP6650DPbF/IRGP6650D-EPbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Collector-to-Emitter Breakdown Voltage 600 V V = 0V, I = 100A (BR)CES GE C Temperature Coeff. of Breakdown Voltage 0.45 V/C V = 0V, I = 1.0mA (25C-175C) V /T GE C (BR)CES J 1.65 1.95 I = 35A, V = 15V, T = 25C C GE J V Collector-to-Emitter Saturation Voltage 2.05 V I = 35A, V = 15V, T = 150C CE(on) C GE J 2.10 I = 35A, V = 15V, T = 175C C GE J V Gate Threshold Voltage 4.0 6.5 V V = V , I = 1.0mA GE(th) CE GE C Threshold Voltage Temperature Coeff. -18 mV/C V = V , I = 1.0mA (25C-175C) V /T CE GE C GE(th) J gfe Forward Transconductance 22 S V = 50V, I = 35A, PW = 20s CE C 1.0 50 V = 0V, V = 600V GE CE I Collector-to-Emitter Leakage Current A CES 600 V = 0V, V = 600V, T = 175C GE CE J I Gate-to-Emitter Leakage Current 100 nA V = 20V GES GE 1.80 2.80 I = 8A F V Diode Forward Voltage Drop V F 1.30 I = 8A, T = 175C F J Switching Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max Units Conditions Total Gate Charge (turn-on) 75 I = 35A Q g C Q Gate-to-Emitter Charge (turn-on) 20 nC V = 15V GE ge Q Gate-to-Collector Charge (turn-on) 30 V = 400V gc CC E Turn-On Switching Loss 300 on E Turn-Off Switching Loss 630 J off I = 35A, V = 400V, V =15V C CC GE E Total Switching Loss 930 total R = 10 , L=210H, T = 25C G J t Turn-On delay time 40 d(on) Energy losses include tail & diode t Rise time 30 r ns reverse recovery t Turn-Off delay time 105 d(off) t Fall time 20 f E Turn-On Switching Loss 640 on E Turn-Off Switching Loss 930 J off I = 35A, V = 400V, V =15V C CC GE E Total Switching Loss 1570 total R = 10 , L=210H, T = 175C G J t Turn-On delay time 40 d(on) Energy losses include tail & diode t Rise time 30 r ns reverse recovery t Turn-Off delay time 120 d(off) t Fall time 60 f C Input Capacitance 2220 V = 0V ies GE C Output Capacitance 130 pF V = 30V CC oes C Reverse Transfer Capacitance 65 f = 1.0MHz res T = 175C, I = 140A J C FULL SQUARE V = 480V, Vp 600V RBSOA Reverse Bias Safe Operating Area CC V = +20V to 0V GE T = 150C,V = 400V, Vp 600V J CC SCSOA Short Circuit Safe Operating Area 5 s V = +15V to 0V GE Erec Reverse Recovery Energy of the Diode 165 J T = 175C J t Diode Reverse Recovery Time 50 ns V = 400V, I = 8A, V = 15V rr CC F GE Rg = 22 L=1.0mH, Ls=150nH I Peak Reverse Recovery Current 14 A rr Notes: V = 80% (V ), V = 20V, Rg = 10 L=210H. CC CES GE R is measured at T of approximately 90C. J Refer to AN-1086 for guidelines for measuring V safely. (BR)CES Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. fsw =40KHz, refer to figure 26. 2 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 14, 2014