X-On Electronics has gained recognition as a prominent supplier of IEWS20R5135IPBXKLA1 IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. IEWS20R5135IPBXKLA1 IGBT Transistors are a product manufactured by Infineon. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

IEWS20R5135IPBXKLA1 Infineon

Name: IEWS20R5135IPBXKLA1
Brand: Infineon
SKU: IEWS20R5135IPBXKLA1_Infineon
Availability: OutOfStock
Rating: 5 (11 reviews)

IEWS20R5135IPBXKLA1 electronic component of Infineon

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Part No.	IEWS20R5135IPBXKLA1
Manufacturer:	Infineon
Category:	IGBT Transistors
Description:	IGBT Transistors HOME APPLIANCES 14
Datasheet:	IEWS20R5135IPBXKLA1 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

IEWS20R5135IPBXKLA1 More Buying Options & Price Grid(s)

Availability	Price	Quantity
0 Multiples : 1000		N/A Obsolete

0 MOQ : 400 Multiples : 400	400 : USD 4.0102 1200 : USD 3.7194 2800 : USD 3.5377	N/A Obsolete

We are delighted to provide the IEWS20R5135IPBXKLA1 from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IEWS20R5135IPBXKLA1 and other electronic components in the IGBT Transistors category and beyond.

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Additional Infomation About Product

IEWS20R5135IPB IPD Protect IGBT 20A/1350V RC-H5 technology with driver IC Features Reverse conducting IGBT with monolithic body diode designed for soft commutation Integrated Driver with o Over-voltage and over-current protection o Active clamp control circuit 6 o Programmable over-voltage threshold 1 o Programmable cycle-by-cycle over-current threshold 1 C Collector o Integrated gate drive with 2 level turn-on current 2 E/COM Emitter/Ground o Temperature warning 3 VCC Supply o Over-temperature protection 4 CS Current Sense o VCC UVLO 5 INN PWM Input o Integrated ESD protection and latch immunity 6 VDET Voltage Sense on all pins Qualified forindustrial applications according to the relevant tests of JEDEC47/20/22 PG-TO247-6 package IEWS20R5135IPB IGBT 20A/1350V RC-H5 technology with driver IC Table of Contents VRECT+ VDET C VCC 13..18V Protecting Driver PWM INN COM CS E/COM GND GND Figure 1 Typical Application Table of Contents Features 1 Applications ................................................................................................................................... 1 Description 1 Table of Contents ........................................................................................................................... 2 1 Block Diagram ............................................................................................................... 3 2 State Diagram ............................................................................................................... 4 3 Electrical Parameters Driver ........................................................................................... 5 3.1 Absolute Maximum Ratings .................................................................................................................... 5 3.2 Recommended Operating Conditions .................................................................................................... 5 For proper operation the device should be used within the recommended conditions. (T =25C) ............. 5 A 3.3 Electrical Characteristics ........................................................................................................................ 6 4 Electrical Parameters IGBT ............................................................................................. 8 4.1 Absolute Maximum Ratings .................................................................................................................... 8 4.2 Electrical Characteristics ........................................................................................................................ 9 5 Pin Configuration, Description and Functionality ............................................................. 11 5.1 Pin Configuration and Description ....................................................................................................... 11 5.2 IGBT connect pins (C, E/COM) ............................................................................................................... 11 5.3 VCC and COM ......................................................................................................................................... 11 5.4 Current limitation input (CS) ................................................................................................................ 12 5.5 PWM input / Diagnostic output (INN) ................................................................................................... 12 5.6 Over-voltage detection input (VDET) ................................................................................................ 13 6 Timing Diagrams........................................................................................................... 16 7 Electrical Characteristics Diagrams................................................................................. 17 8 Test Conditions ............................................................................................................ 24 9 Package Drawing .......................................................................................................... 25 9.1 Package Dimensions ............................................................................................................................. 26 Revision History ............................................................................................................................ 27 2 Revision 2.3 2020-05-27

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

CYP may also be referenced as

Cypress
Cypress / Spansion
CYPRESS SEMI
Cypress Semicon
Cypress Semiconductor
Cypress Semiconductor Corp
INF
INFINEON
Infineon IR
INFINEON (CYPRESS)
Infineon (IRF)
Infineon / Cypress
Infineon / IR
INFINEON TECH ICs
Infineon Technologies
INFINEON TECHNOLOGIES AG
Infineon Technologies Americas Corp.
Infinite Power Solutions
INTERNATIONAL RECTIF
INTERNATIONAL RECTIFIER
International Rectifier HiRel Products
INTL RECTIFIER
IR
IRH
Ramtron
Ramtron / Cypress Semiconductor
Ramtron International Corp
SP9
SPANSION

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Manufacturer Infineon Infineon
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1350 V 1350 V
Collector-Emitter Saturation Voltage 1.65 V 1.65 V
Maximum Gate Emitter Voltage 20 V 20 V
Continuous Collector Current at 25 C 40 A 40 A
Package / Case TO - 247 - 6 TO - 247 - 6
Packaging Tube Tube
Mounting Style Through Hole Through Hole
Pd - Power Dissipation 288 W 288 W
Minimum Operating Temperature - 40 C - 40 C
Maximum Operating Temperature + 125 C + 125 C
Continuous Collector Current Ic Max 20 A 20 A
Brand Infineon Technologies Infineon Technologies
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 1000 1000
Subcategory Igbts Igbts
Hts Code 8541290095 8541290095