About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NGTB40N65FL2WG


ON Semiconductor IGBT Transistors 650V40A FAST IGBT FSII T
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ON Semiconductor Availability : 22
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USD 3.5995
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Single650 V2.1 V20 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole366 W- 55 C+ 175 C 
FGA6540WDF


IGBT Transistors IGBT, 650 V, 40 A Field Stop Trench
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ON Semiconductor Availability : 19
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USD 2.855
Multiples of: 1

Single650 V1.8 V20 V80 A400 nA  TO - 3PNTubeSiThrough Hole238 W- 55 C+ 175 CFga6540wdf
FGHL50T65MQD


IGBT Transistors 650 V 50 A FS4
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ON Semiconductor Availability : 19
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USD 3.4588
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Hot NGTB25N120FL2WG


IGBT Transistors 1200V/25 FAST IGBT FSII T
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ON Semiconductor Availability : 19
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USD 3.4975
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         TubeSi     
FGA15N120FTDTU


IGBT 1200V 15A TO-3PN ELECTRONICS PART
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USD 3.8572
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Single1200 V +/- 25 V    TO - 3PN - 3Tube Through Hole - 55 C+ 150 CFga15n120ftdtu
FGH30N60LSDTU


Fairchild Semiconductor IGBT Transistors PDD
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ON Semiconductor Availability : 19
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USD 4.9366
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Single600 V +/- 20 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CFgh30n60lsd
AFGY120T65SPD


IGBT Trench Field Stop 650V 160A 714W Through Hole TO-247-3
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ON Semiconductor Availability : 19
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USD 12.6093
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        TO - 247 - 3      Automotive, Aec - Q101
NGTB20N135IHRWG


ON Semiconductor IGBT Transistors 1350V20A IGBT FSII TO-24
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ON Semiconductor Availability : 18
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USD 2.668
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Single1350 V2.2 V25 V40 A100 nA  TO - 247TubeSiThrough Hole394 W- 40 C+ 175 CNgtb20n135ihr
NGTB50N60FWG


IGBT Transistors 600V/50A IGBT NPT TO-247
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ON Semiconductor Availability : 18
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USD 3.5075
Multiples of: 1

Single600 V1.45 V30 V100 A200 nA223 W TO - 247Tube Through Hole - 55 C+ 150 CNgtb50n60fwg
AFGY160T65SPD-B4


IGBT Transistors IGBT - 650V 160A Field Stop Trench IGBT with VCESAT and VTH Binning
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ON Semiconductor Availability : 18
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USD 14.6991
Multiples of: 1

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