AFGY160T65SPD-B4 ON Semiconductor

Field Stop Trench IGBT With Soft Fast Recovery Diode and V , V CESAT TH Binning 650 V, 160 A AFGY160T65SPD-B4 www.onsemi.com Features AECQ101 Qualified and PPAP Capable C Very Low Saturation Voltage: V = 1.6 V (Typ.) I = 160 A CE(sat) C Maximum Junction Temperature: T = 175C J Positive Temperature CoEfficient G Tight Parameter Distribution High Input Impedance E 100% of the Parts are Dynamically Tested Short Circuit Ruggedness > 6 s 25C Copacked with Soft, Fast Recovery Extremefast Diode This Device is PbFree, Halogen Free/BFR Free and are RoHS Compliant Benefits Very Low Conduction and Switching Losses for a High Efficiency Operation in Various Applications G C E Rugged Transient Reliability Outstanding Parallel Operation Performance with Balance Current TO2473LD CASE 340CU Sharing Low EMI MARKING DIAGRAM Applications Traction Inverter for HEV/EV Auxiliary DC/AC Converter Motor Drives Y&Z&3&K Other PowerTrain Applications Requiring High Power Switch AFGY160T 65SPD&B Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Date Code (Year & Week) &K = Lot Traceability Code AFGY160T65SPD = Specific Device Code &B = BIN Designator ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2020 Rev. 2 AFGY160T65SPDB4/DAFGY160T65SPD B4 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings Unit V Collector to Emitter Voltage 650 V CES V Gate to Emitter Voltage 20 V GES Transient Gate to Emitter Voltage 30 V I Collector Current T = 25C (Note 1) 240 A C C Collector Current T = 100C 220 A C I Nominal Current 160 A Nominal I Pulsed Collector Current 480 A CM I Diode Forward Current T = 25C (Note 1) 240 A FM C Diode Forward Current T = 100C 188 A C P Maximum Power Dissipation T = 25C 882 W D C Maximum Power Dissipation T = 100C 441 W C SCWT Short Circuit Withstand Time T = 25C 6 s C V/ t Voltage Transient Ruggedness (Note 2) 10 V/ns T Operating Junction Temperature 55 to +175 C J T Storage Temperature Range 55 to +175 C stg T Maximum Lead Temp. for soldering Purposes, 1/8 from case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Limited to bondwire. 2. V = 400 V, V = 15 V, I = 480 A, Inductive load. CC GE CE THERMAL CHARACTERISTICS Symbol Parameter Typ. Max. Units Thermal Resistance, Junction to Case 0.17 C/W R (IGBT) JC R (Diode) Thermal Resistance, Junction to Case 0.32 C/W JC R Thermal Resistance, Junction to Ambient 40 C/W JA PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Bin Designator Packing Type Qty per Tube/Reel* AFGY160T65SPDA AFGY160T65SPDB4 A Tube 30 AFGY160T65SPDB AFGY160T65SPDB4 B Tube 30 AFGY160T65SPDC AFGY160T65SPDB4 C Tube 30 AFGY160T65SPDD AFGY160T65SPDB4 D Tube 30 *Generally all tubes in one box will belong to the same bin. In rare and unusual cases there may be tubes from more than one bin inside one box. Such mixing would not be considered a quality excursion. The primary container quantity (MPQ) for these binning products is 30 units and therefore partial box shipment can be expected. www.onsemi.com 2