About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGD3245G2-F085


Trans IGBT Chip N-CH 450V 23A 150000mW Automotive 3-Pin(2+Tab) DPAK T/R
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ON Semiconductor Availability : 13
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USD 1.5717
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Single        Tape And Reel      
NGTG30N60FLWG


IGBT Transistors 600V/30A IGBT LPT TO-247
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USD 2.047
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Single600 V1.65 V30 V60 A100 nA250 W TO - 247TubeSiThrough Hole250 W- 55 C+ 150 CNgtg30n60flwg
NGTB75N60SWG


ON Semiconductor IGBT Transistors FSII 75A 600V Welding
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ON Semiconductor Availability : 11
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USD 3.726
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Single600 V1.7 V+/- 20 V100 A200 nA  TO - 247 - 3TubeSiThrough Hole595 W- 55 C+ 175 C 
FGH60N60SMD_F085


IGBT Transistors 600V/60A Field Stop IGBT Gen 2
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USD 4.7346
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Single600 V2.14 V+/- 20 V120 A400 nA600 W TO - 247 - 3TubeSiThrough Hole600 W- 55 C+ 175 CFgh60n60
NGTB50N60SWG


ON Semiconductor IGBT Transistors 600V50A IGBT FS1 TO-247
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USD 2.875
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         TubeSi     
NGTB40N120FL2WG


IGBT Transistors 1200V/40A FAST IGBT FSII
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USD 5.2948
Multiples of: 1

Single1200 V2 V30 V80 A200 nA535 W TO - 247TubeSiThrough Hole535 W- 55 C+ 175 CNgtb40n120fl2
SGF23N60UFTU


IGBT Transistors 600V/12A
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ON Semiconductor Availability : 4
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USD 1.3616
Multiples of: 1

Single600 V2.1 V+/- 20 V23 A+/- 100 nA75 W TO - 3PF - 3Tube Through Hole - 55 C+ 150 CSgf23n60
FGA6530WDF


Fairchild Semiconductor IGBT Transistors FS3 650V SHD prolferation
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USD 1.9625
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Single650 V1.8 V+/- 20 V60 A+/- 400 nA  TO - 3PN - 3TubeSiThrough Hole176 W- 55 C+ 175 CFga6530wdf
FGPF10N60UNDF


IGBT Transistors 600V, 10A Short Circuit Rated IGBT
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USD 1.0075
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 600 V2 V 20 A 17 W TO - 220FTubeSiThrough Hole17 W  Fgpf10n60undf
NGTB15N120FL2WG


IGBT Transistors 1200V/15A VERY FAST IGBT
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USD 3.5537
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