About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGP15N60UNDF


IGBT Transistors 600V 15A NPT IGBT
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USD 1.047
Multiples of: 1

Single600 V2.7 V+/- 20 V30 A+/- 10 uA178 W TO - 220TubeSiThrough Hole178 W- 55 C+ 150 CFgp15n60undf
FGD3245G2_F085


Fairchild Semiconductor IGBT Transistors EcoSPARK2-450V Ignition IGBT
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USD 1.0557
Multiples of: 1

Single450 V1.64 V+/- 10 V23 A   TO - 252AA - 3ReelSiSmd/Smt150 W- 40 C+ 175 CFgd3245g2_F085
FGP5N60UFDTU


IGBT Transistors 600V, 5A Field Stop
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USD 1.0623
Multiples of: 400

Single600 V +/- 20 V    TO - 220 - 3Tube Through Hole - 55 C+ 150 CFgp5n60
NGTB15N120IHLWG


IGBT Transistors 1200V/15A IGBT LPT TO-2
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USD 1.0706
Multiples of: 30

 1200 V 20 V30 A   TO - 247Tube Through Hole250 W  Ngtb15n120ihl
FGB5N60UNDF


IGBT Transistors 600V 5A NPT IGBT
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USD 1.1099
Multiples of: 391

Single600 V2.4 V+/- 20 V10 A+/- 10 nA73.5 W TO - 263AB (D2 PAK)TubeSiSmd/Smt73.5 W- 55 C+ 150 CFgb5n60undf
NGTB40N65IHRWG


IGBT Transistors 40A 650V MONOLITHIC RC IG
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USD 1.174
Multiples of: 1

         TubeSi     
NGTB40N60FL2WG


ON Semiconductor IGBT Transistors 600V40A FAST IGBT FSII T
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USD 1.2174
Multiples of: 1

Single600 V1.85 V20 V80 A200 nA  TO - 247 - 3TubeSiThrough Hole366 W- 55 C+ 175 C 
SGS10N60RUFDTU


IGBT Transistors 600V/10A/w/FRD
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USD 1.2241
Multiples of: 1

Single600 V2.2 V+/- 20 V16 A+/- 100 nA55 W TO - 220 - 3 FPTubeSiThrough Hole55 W- 55 C+ 150 CSgs10n60
HGTP7N60C3D


IGBT Transistors 14a 600V N-Ch IGBT UFS Series
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USD 1.2401
Multiples of: 300

Single600 V1.6 V+/- 20 V14 A+/- 250 nA60 W TO - 220 - 3Tube Through Hole - 40 C+ 150 CHgtp7n60
SGP23N60UFTU


IGBT Transistors Dis High Perf IGBT
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USD 1.2625
Multiples of: 50

Single600 V2.1 V+/- 20 V23 A+/- 100 nA  TO - 220 - 3TubeSiThrough Hole100 W- 55 C+ 150 CSgp23n60uf
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