About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGH40N65UFDTU-F085


IGBT Transistors N-ch / 40A 650V
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USD 2.5366
Multiples of: 1

Single650 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n65ufd
FGB40T65SPD-F085


IGBT Transistors Trench IGBT
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USD 2.5373
Multiples of: 1

Single650 V2.9 V+/- 20 V80 A+/- 400 nA  TO - 263 - 3Cut TapeSiSmd/Smt267 W- 55 C+ 175 CFgb40t65spd
NGTB30N60L2WG


N-CHANNEL IGBT WITH LOW VF SWITCHING DIODE 600V 30A VCE(sat); 1.4V
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USD 2.5373
Multiples of: 1

         TubeSi     
NGTG15N120FL2WG


IGBT Transistors 1200V/15A VERY FAST IGBT
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USD 2.54
Multiples of: 166

         TubeSi     
FGA4060ADF


IGBT Transistors 650V FS Gen3 Trench IGBT proliferation
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USD 2.5904
Multiples of: 163

Single600 V1.8 V30 V80 A400 nA  TO - 3PNBulkSiThrough Hole238 W- 55 C+ 175 CFga4060adf
FGH40N60SMD_F085


IGBT Transistors 600V/40A FS Planar IGBT Gen 2
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USD 2.6028
Multiples of: 3

Single600 V2.1 V+/- 20 V80 A400 nA349 W TO - 247 - 3 SiThrough Hole349 W- 55 C+ 175 CFgh40n60sm_F085
FGA20S120M


IGBT Transistors 1200V 20A SA FS
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USD 2.6073
Multiples of: 162

 1200 V1.55 V25 V40 A250 nA  TO - 3Tube Through Hole348 W- 55 C+ 150 CFga20s120m
NGTB15N60S1EG


IGBT Transistors 15A 600V IGBT
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USD 2.6166
Multiples of: 1

 600 V1.7 V20 V30 A100 nA47 W TO - 220Tube Through Hole   Ngtb15n60s1
NGTB30N120IHLWG


IGBT Transistors IGBT 1200V 30A FS1 Induction Heating
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USD 2.6211
Multiples of: 1

Single1200 V1.75 V20 V60 A200 nA260 W TO - 247TubeSiThrough Hole260 W- 55 C+ 150 CNgtb30n120ihl
NGTB30N60FLWG


IGBT Transistors 600V/30A IGBT LPT TO-247
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USD 2.6233
Multiples of: 1

Single600 V1.65 V30 V60 A100 nA  TO - 247Tube Through Hole250 W- 55 C+ 150 CNgtb30n60flwg
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