About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
NGTG40N120FL2WG


IGBT Transistors 1200V/40A FAST IGBT FSII
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USD 3.8994
Multiples of: 1

         TubeSi     
FGH60N60SFDTU_F085


Fairchild Semiconductor IGBT Transistors N-Ch 60A 600V FS IGBT
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USD 3.9146
Multiples of: 1

Single600 V2.2 V+/- 20 V120 A+/- 400 nA  TO - 247 - 3TubeSicThrough Hole378 W- 55 C+ 150 CFgh60n60sf_F085
FGH40N120ANTU


IGBT Transistors 1200V NPT
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USD 4.0176
Multiples of: 1

Single1200 V +/- 25 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n120an
FGA25N120ANTDTU-F109


IGBTs NPT and Channel 1200V 50A TO-3P RoHS
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USD 4.0895
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Single1200 V 20 V    TO - 3PN - 3TubeSiThrough Hole - 55 C+ 150 CFga25n120antdtu
FGBS3040E1-F085


IGBT Transistors SMART IGBT
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USD 4.123
Multiples of: 1

         Cut TapeSi    Fgbs3040_F085
FGH40N60SMD-F085


IGBT Transistors 600V/40A FS Planar IGBT Gen 2
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USD 4.1623
Multiples of: 1

Single       TO - 252 - 3Cut TapeSiSmd/Smt62.5 W- 55 C+ 175 CFdd9411_F085
NGTB75N65FL2WG


ON Semiconductor IGBT Transistors
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USD 4.1826
Multiples of: 1

         TubeSi    Ngtb75n65fl2
NGTB50N120FL2WG


IGBT Transistors 1200V/50A FAST IGBT FSII
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USD 4.3144
Multiples of: 7

Single1200 V2.2 V30 V100 A200 nA535 W TO - 247TubeSiThrough Hole535 W- 55 C+ 175 CNgtb50n120fl2
NGTB40N135IHRWG


IGBT Transistors 1350V/40A IGBT FSII TO-24
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USD 4.3398
Multiples of: 97

Single1350 V2.4 V25 V80 A100 nA394 W TO - 247TubeSiThrough Hole394 W- 40 C+ 175 CNgtb40n135ihr
FGH25T120SMD_F155


IGBT Transistors 1200V, 25A Field Stop Trench IGBT
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USD 4.3567
Multiples of: 1

Single1200 V1.9 V+/- 25 V50 A400 nA428 W TO - 247G03 - 3TubeSiThrough Hole428 W- 55 C+ 175 CFgh25t120
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