About IGBT Transistors

On Semiconductor IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGHL40T65MQD


IGBT Transistors 650 V 40 A FS4
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ON Semiconductor Availability : 517
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USD 2.1965

Multiples of: 1

         Tube      
SGP10N60RUFDTU


IGBT Transistors Dis Short Circuit Rated IGBT
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ON Semiconductor Availability : 507
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USD 1.5

Multiples of: 1

Single600 V2.2 V+/- 20 V16 A+/- 100 nA75 W TO - 220 - 3TubeSiThrough Hole75 W- 55 C+ 150 CSgp10n60
FGP5N60LS


IGBT Transistors 600V/5A Field Stop Low Vcesat
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ON Semiconductor Availability : 500
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USD 0.7048

Multiples of: 1

 600 V1.8 V20 V10 A400 nA83 W TO - 220TubeSiThrough Hole83 W- 55 C+ 125 CFgp5n60
AFGHL50T65SQ


IGBT Transistors 650V50A FS4 IGBT TO-247LL
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ON Semiconductor Availability : 439
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USD 2.5154

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AFGHL40T65SPD


IGBT Transistors FS3 T TO247 40A 65
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ON Semiconductor Availability : 436
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USD 4.2705

Multiples of: 1

Single650 V1.85 V20 V80 A400 nA Aec - Q101TO - 247 - 3Tube Through Hole267 W- 55 C+ 175 C 
FGH40T120SMD_F155


IGBT Transistors 1200V, 40A Field Stop Trench IGBT
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ON Semiconductor Availability : 436
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USD 6.0713

Multiples of: 450

Single1200 V2 V+/- 25 V80 A400 nA555 W TO - 247G03 - 3TubeSiThrough Hole555 W- 55 C+ 175 CFgh40t120
FGH60N60SFDTU


IGBT Transistors N-Ch/ 60A 600V FS
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ON Semiconductor Availability : 436
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USD 8.098

Multiples of: 1

Single600 V +/- 20 V    TO - 247AB - 3Tube Through Hole - 55 C+ 150 CFgh60n60
FGY160T65SPD_F085


IGBT Transistors 650V Field Stop Gen3 Trench IGBT
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ON Semiconductor Availability : 434
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USD 10.6073

Multiples of: 1

Single650 V1.6 V+/- 20 V240 A+/- 250 nA  TO - 247 - 3BulkSiThrough Hole882 W- 55 C+ 175 CFgy160t65s_F085
FGA180N33ATDTU


IGBT Transistors 330V 180A PDP Trench
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ON Semiconductor Availability : 426
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USD 3.0269

Multiples of: 1

Single330 V +/- 30 V    TO - 3PN - 3TubeSiThrough Hole - 55 C+ 150 CFga180n33atdtu
NGTB75N65FL2WG


ON Semiconductor IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 424
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USD 6.9529

Multiples of: 1

         TubeSi    Ngtb75n65fl2
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