About IGBT Transistors

Microchip IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT27GA90BD15


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 0
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USD 6.6734
Multiples of: 1

Single900 V2.5 V30 V48 A100 nA  TO - 247 - 3TubeSiThrough Hole223 W- 55 C+ 150 C 
APT44GA60BD30


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 0
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USD 7.036
Multiples of: 1

      337 W   POWER MOS 8®, PT     
APT50GS60BRDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Low Frequency - Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 0
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USD 7.0794
Multiples of: 60

Single600 V2.8 V30 V93 A100 nA  TO - 247 - 3TubeSiThrough Hole415 W- 55 C+ 150 C 
APT35GA90BD15


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 0
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USD 7.3
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      290 W   POWER MOS 8®, PT     
APT40GR120B


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 7.4394
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      500 W   NPT, POWER MOS 8®     
APT25GR120S


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 7.45
Multiples of: 1

      521 W   NPT, POWER MOS 8®     
APT43GA90B


IGBT Transistors FG, IGBT, 900V, TO-247
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Microchip Availability : 0
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USD 7.476
Multiples of: 1

      337 W   POWER MOS 8®, PT     
APT20GN60SDQ2G


IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 20 A TO-268
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Microchip Availability : 0
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USD 7.63
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      136 W   Field Stop     
APT25GP90BDQ1G


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 0
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USD 7.906
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      417 W   POWER MOS 7®, PT     
APT25GR120BD15


IGBT Transistors FG, IGBT-COMBI, 1200V, 25A, TO247
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Microchip Availability : 0
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USD 8.232
Multiples of: 1

      521 W   NPT, POWER MOS 8®     
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