T O-247 APT25GR120B S APT25GR120B APT25GR120S 1200V, 25A, V = 2.5V Typical ce(on) Ultra Fast NPT - IGBT (B) 3 D PA K The Ultra Fast NPT - IGBT family of products is the newest generation of planar IGBTs optimized for outstanding ruggedness and the best trade-off between (S) C conduction and switching losses. G E G Features C E Low Saturation Voltage Short Circuit Withstand Rated Low Tail Current High Frequency Switching RoHS Compliant Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter Ratings Unit V Collector Emitter Voltage 1200 ces V V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 75 C1 C I Continuous Collector Current T = 125C 25 A C2 C 1 I Pulsed Collector Current 100 CM SCWT Short Circuit Withstand Time: V = 600V, V = 15V, T =125C 10 s CE GE C P Total Power Dissipation T = 25C 521 W D C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V Collector-Emitter Breakdown Voltage (V = 0V, I = 500 A) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 1.0mA, T = 25C) 3.5 5.0 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 25A, T = 25C) 2.5 3.2 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 25A, T = 125C) 3.3 GE C j Collector-Emitter On Voltage (V = 15V, I = 50A, T = 25C) 3.5 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 5 500 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 50 CE GE j I Gate-Emitter Leakage Current (V = 20V) 250 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT25GR120B S Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 2784 ies C Output Capacitance V = 0V, V = 25V 271 pF oes GE CE C Reverse Transfer Capacitance f = 1MHz 75 res V Gate to Emitter Plateau Voltage 7.5 V GEP Gate Charge 3 Q Total Gate Charge 154 203 g V = 15V GE Q Gate-Emitter Charge 20 27 ge V = 600V nC CE Q Gate- Collector Charge I = 25A 76 97 gc C t Turn-On Delay Time Inductive Switching (25C) 16 d(on) t Current Rise Time V = 600V 10 r CC ns t Turn-Off Delay Time V = 15V 122 d(off) GE t Current Fall Time I = 25A 20 f C 5 4 E Turn-On Switching Energy 742 1110 R = 4.3 on2 G J 6 427 640 E Turn-Off Switching Energy T = +25C off J t Turn-On Delay Time Inductive Switching (125C) 16 d(on) t Current Rise Time V = 600V 10 r CC ns t Turn-Off Delay Time V = 15V 136 d(off) GE t Current Fall Time 28 I = 25A f C 5 4 E Turn-On Switching Energy 1297 1945 R = 4.3 on2 G J 6 E Turn-Off Switching Energy 480 720 T = +125C off J THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance .24 JC C/W R Junction to Ambient Thermal Resistance 40 JA .22 oz W Package Weight T 6.2 g 10 in-lbf Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 6.2 N m 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the on2 clamping diode. 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 0.25 D = 0.9 0.20 0.7 0.15 0.5 Note: 0.10 t 1 0.3 t 2 0.05 t 1 t 0.1 Duty Factor D = / 2 Peak T = P x Z +T J DM JC C 0.05 SINGLE PULSE 0 -5 -4 -2 -3 10 10 10 10 0.1 1 RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 052-6408 Rev A 1-2013 Z , THERMAL IMPEDANCE (C/W) JC P DM