T O-247 APT40GR120B S APT40GR120B APT40GR120S 1200V, 40A, V = 2.5V Typical CE(on) Ultra Fast NPT - IGBT (B) 3 The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. D PA K Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers superior ruggedness and ultrafast switching speed. (S) C G E Features G C Low Saturation Voltage Short Circuit Withstand Rated E Low Tail Current High Frequency Switching to 50KHz RoHS Compliant Ultra Low Leakage Current Unless stated otherwise, Microsemi discrete IGBTs contain a single IGBT die. This device is recommended for applications such as induction heating (IH), motor control, general purpose inverters and uninterruptible power supplies (UPS). MAXIMUM RATINGS All Ratings: T = 25C unless otherwise speci ed. C Symbol Parameter Ratings Unit V Collector Emitter Voltage 1200 ces V V Gate-Emitter Voltage 30 GE I Continuous Collector Current T = 25C 88 C1 C I Continuous Collector Current T = 100C 40 A C2 C 1 I Pulsed Collector Current 160 CM SCWT Short Circuit Withstand Time: V = 600V, V = 15V, T =125C 10 s CE GE C P Total Power Dissipation T = 25C 500 W D C T ,T Operating and Storage Junction Temperature Range -55 to 150 J STG C T Max. Lead Temp. for Soldering: 0.063 from Case for 10 Sec. 300 L STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Min Typ Max Unit V Collector-Emitter Breakdown Voltage (V = 0V, I = 1.0mA) 1200 (BR)CES GE C V Gate Threshold Voltage (V = V , I = 2.0mA, T = 25C) 3.5 5.0 6.5 GE(TH) CE GE C j Volts Collector-Emitter On Voltage (V = 15V, I = 40A, T = 25C) 2.5 3.2 GE C j V CE(ON) Collector-Emitter On Voltage (V = 15V, I = 40A, T = 125C) 3.5 GE C j Collector-Emitter On Voltage (V = 15V, I = 88A, T = 25C) 3.2 GE C j 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 25C) 10 1000 CE GE j I A CES 2 Collector Cut-off Current (V = 1200V, V = 0V, T = 125C) 100 CE GE j I Gate-Emitter Leakage Current (V = 20V) 250 nA GES GE CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - DYNAMIC CHARACTERISTICS APT40GR120B S Symbol Parameter Test Conditions Min Typ Max Unit C Input Capacitance Capacitance 3980 ies C Output Capacitance V = 0V, V = 25V 320 pF oes GE CE C Reverse Transfer Capacitance f = 1MHz 80 res V Gate to Emitter Plateau Voltage 7V GEP Gate Charge 3 Q Total Gate Charge 210 g V = 15V GE Q Gate-Emitter Charge 25 ge V = 600V nC CE 90 Q Gate- Collector Charge I = 40A gc C t Turn-On Delay Time Inductive Switching (25C) 22 d(on) t Current Rise Time V = 600V 25 r CC ns t Turn-Off Delay Time V = 15V 163 d(off) GE t Current Fall Time I = 40A 40 f C 5 4 E Turn-On Switching Energy R = 4.3 1375 3000 on2 G J 6 E Turn-Off Switching Energy T = +25C 906 1650 off J t Turn-On Delay Time Inductive Switching (125C) 22 d(on t Current Rise Time V = 600V 25 r CC ns t Turn-Off Delay Time V = 15V 185 d(off) GE t Current Fall Time I = 40A 47 f C 5 4 E Turn-On Switching Energy R = 4.3 1916 3500 on2 G J 6 1186 2500 E Turn-Off Switching Energy T = +125C off J THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit R Junction to Case Thermal Resistance .25 JC C/W R Junction to Ambient Thermal Resistance 40 JA .22 oz W Package Weight T 6.2 g 10 in-lbf Torque Mounting Torque (TO-247 Package), 4-40 or M3 screw 6.2 N m 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380 s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 R is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) G 5 E is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the on2 clamping diode. 6 E is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. off Microsemi reserves the right to change, without notice, the speci cations and information contained herein. 052-6400 Rev B 5-2020