About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW20H60DF


STMicroelectronics IGBT Transistors 600V 20A Hi Spd TrenchGate FieldStop
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USD 2.1044
Multiples of: 1

Single600 V2 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole167 W- 55 C+ 175 C600 - 650V Igbts
STGWA20H65DFB2


IGBT Transistors PTD IGBT & IPM
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STMicroelectronics Availability : 0
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USD 2.1547
Multiples of: 1

         Tube      
STGW20H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 2.2118
Multiples of: 1

Single650 V1.55 V20 V40 A250 nA  TO - 247 - 3TubeSiThrough Hole168 W- 55 C+ 175 C600 - 650V Igbts
STGW45HF60WDI


IGBT Transistors 45A 600V Ultra Fast IGBT
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STMicroelectronics Availability : 0
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USD 2.2262
Multiples of: 600

  1.9 V20 V70 A100 nA250 W TO - 247TubeSiThrough Hole250 W  Stgw45hf60wdi
STGW30N120KD


IGBT Transistors 30 A - 1200 V Rugged IGBT
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STMicroelectronics Availability : 0
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USD 2.2308
Multiples of: 600

Single1200 V +/- 25 V    TO - 247 - 3Tube Through Hole - 55 C+ 125 CStgw30n120kd
STGW35HF60WDI


STMicroelectronics IGBT Transistors 35 A 600 V Ultra fast IGBT
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STMicroelectronics Availability : 0
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USD 2.2585
Multiples of: 1

         TubeSi    Stgw35hf60wdi
STGW45HF60WD


IGBT Transistors 45A 600V Ultra Fast IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 0
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USD 2.261
Multiples of: 1

  1.9 V20 V70 A100 nA250 W TO - 247TubeSiThrough Hole250 W  Stgw45hf60wd
STGP35HF60W


STMicroelectronics IGBT Transistors 35A Ultrafast IGBT 600V 100kHz
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USD 2.275
Multiples of: 50

Single600 V1.65 V20 V60 A100 nA200 W TO - 220TubeSiThrough Hole200 W- 55 C+ 150 CStgp35hf60w
STGW40NC60WD


Trans IGBT Chip N-CH 600V 70A 3-Pin(3+Tab) TO-247 Tube
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USD 2.3242
Multiples of: 4

Single        Rail/Tube      
STGWT40H60DLFB


IGBT Transistors 600V 40A HSpd trench gate field-stop IGBT
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USD 2.392
Multiples of: 1

Single600 V1.6 V+/- 20 V80 A250 nA283 W TO - 3PTubeSiThrough Hole283 W- 55 C+ 175 CStgwt40h60dlfb
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