About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW35NB60SD


Transistor: IGBT; 600V; 35A; 200W; TO247-3
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USD 4.2827
Multiples of: 30

      200 W         
STGWT60V60DF


IGBT Transistors 600V 60A Trench Gate Field-Stop IGBT
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USD 4.3836
Multiples of: 1

Single600 V2.35 V+/- 20 V80 A 375 W TO - 3P - 3TubeSiThrough Hole375 W- 55 C+ 175 CStgwt60v60df
STGW75M65DF2


IGBT Transistors PTD HIGH VOLTAGE
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USD 4.4906
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Single650 V1.65 V20 V120 A+/- 250 uA  TO - 247 - 3 SiThrough Hole468 W- 55 C+ 175 CStgw75m65df2
STGW30N90D


IGBT Transistors N-Chnl 900V IGBT
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USD 4.8405
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Single900 V +/- 25 V    TO - 247 - 3TubeSiThrough Hole - 55 C+ 150 CStgw30n90d
STGW60H60DLFB


STMicroelectronics IGBT Transistors 600V 60A trench gate field-stop IGBT
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USD 4.9485
Multiples of: 600

Single600 V1.6 V+/- 20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole375 W- 55 C+ 175 C600 - 650V Igbts
STGWA60V60DF


IGBT Transistors 600 V, 60 A very high speed trench gate field-stop IGBT
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USD 5.0967
Multiples of: 1

         Tube      
STGWA40N120KD


IGBT Transistors 40A 1200V short circuit rugged IGBT
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USD 5.187
Multiples of: 1

         TubeSi    900 - 1300V Igbts
STGW60H65DFB-4


IGBT Transistors Trench gate field-stop IGBT HB series 650 V 60 A high speed
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USD 5.5106
Multiples of: 1

Single650 V1.6 V20 V80 A250 uA  TO - 247 - 4 SiThrough Hole283 W- 55 C+ 175 CStgw60h65dfb - 4
STGW60H65F


IGBT Transistors 60A 650V FST IGBT Very High Switching
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USD 5.8426
Multiples of: 1

  1.9 V+/- 20 V120 A100 nA360 W TO - 247Tube Through Hole - 55 C+ 150 CStgw60h65f
STGWT80H65DFB


IGBT Transistors Trench gate H series 650V 80A HiSpd
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USD 5.9069
Multiples of: 1

Single650 V1.6 V+/- 20 V120 A250 nA469 W TO - 3PTubeSiThrough Hole469 W- 55 C+ 175 CStgwt80h65dfb
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