STGWA60V60DF STMicroelectronics

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data Features Maximum junction temperature: T = 175 C J Tail-less switching off V = 1.85 V (typ.) I = 60 A CE(sat) C 3 2 1 Tight parameter distribution TO-247 TO-247 long leads Safe paralleling TAB Low thermal resistance Very fast soft recovery antiparallel diode 3 Applications 2 1 TO-3P Photovoltaic inverters Uninterruptible power supply Figure 1. Internal schematic diagram Welding C (2 or TAB) Power factor correction Very high frequency converters Description G (1) These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters. Furthermore, a positive E (3) V temperature coefficient and very tight CE(sat) parameter distribution result in safer paralleling operation. Table 1. Device summary Order code Marking Package Packing STGW60V60DF GW60V60DF TO-247 Tube STGWA60V60DF G60V60DF TO-247 long leads Tube STGWT60V60DF GWT60V60DF TO-3P Tube September 2016 DocID024154 Rev 7 1/20 This is information on a product in full production. www.st.com 20Contents STGW60V60DF, STGWA60V60DF, STGWT60V60DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) . 6 3 Test circuits 11 4 Package information 12 4.1 TO-247 package information 13 4.2 TO-247 long leads package information . 15 4.3 TO-3P package information . 17 5 Revision history . 19 2/20 DocID024154 Rev 7