About IGBT Transistors

Stmicroelectronics IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
STGW80H65DFB-4


IGBT Transistors Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
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STMicroelectronics Availability : 319
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USD 3.4972
Multiples of: 1

                
STGP8NC60KD


IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET
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STMicroelectronics Availability : 256
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USD 0.884
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Single600 V +/- 20 V    TO - 220 - 3TubeSiThrough Hole - 55 C+ 150 CStgp8nc60kd
STGP10M65DF2


STMicroelectronics IGBT Transistors
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics Availability : 255
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USD 0.429
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         TubeSi    600 - 650V Igbts
STGWT60H65FB


IGBT Transistors 650V 60A HSpd trench gate field-stop IGBT
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STMicroelectronics Availability : 203
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USD 1.9942
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Single650 V1.6 V+/- 20 V80 A250 nA375 W TO - 3PTubeSiThrough Hole375 W- 40 C+ 175 CStgwt60h65fb
STGW60H65DRF


IGBT Transistors 60A 650V Field Stop Trench Gate IBGT
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STMicroelectronics Availability : 187
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USD 2.4625
Multiples of: 1

 650 V1.9 V20 V120 A250 nA360 W TO - 247TubeSiSmd/Smt360 W  Stgw60h65drf
STGP6NC60HD


IGBT Transistors PowerMESH" IGBT
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STMicroelectronics Availability : 181
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USD 0.91
Multiples of: 1

Single600 V1.9 V20 V15 A100 nA56 W TO - 220 - 3TubeSiThrough Hole56 W- 55 C+ 150 CStgp6nc60hd
STGP20NC60V


STMicroelectronics IGBT Transistors N-Ch 600 Volt 30 Amp
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STMicroelectronics Availability : 155
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USD 2.3582
Multiples of: 1

Single600 V2.5 V+/- 20 V60 A+/- 100 nA  TO - 220 - 3TubeSiThrough Hole200 W- 55 C+ 150 C600 - 650V Igbts
STGW20NC60VD


Transistor: IGBT; 600V; 30A; 200W; TO247-3
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STMicroelectronics Availability : 151
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USD 2.132
Multiples of: 1

      200 W         
STGF15M65DF2


IGBT Transistors Trench gate field-stop IGBT M series, 650 V 15 A low loss
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STMicroelectronics Availability : 145
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USD 0.7865
Multiples of: 1

Single650 V1.55 V+/- 20 V30 A+/- 250 uA  TO - 220FP - 3 SiThrough Hole31 W- 55 C+ 175 CStgf15m65df2
STGB19NC60KDT4


STMicroelectronics IGBT Transistors 20 A - 600 V - short circuit rugged IGBT
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STMicroelectronics Availability : 145
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USD 1.0991
Multiples of: 1

Single600 V +/- 20 V    D2PAK - 3ReelSiSmd/Smt - 55 C+ 150 CStgb19nc60kd
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