About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.

IGBT Transistors

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(Ex. GST)(▲▼)		Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGA50T65SHD


Fairchild Semiconductor IGBT Transistors
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ON Semiconductor Availability : 0
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USD 2.6033
Multiples of: 1

 650 V2.14 V30 V100 A400 nA  TO - 3PNTubeSiThrough Hole319 W- 55 C+ 175 CFga50t65shd
AOK20B120E2


Transistor: IGBT; 1.2kV; 20A; 125W; TO247; 0.82mJ
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Alpha & Omega Availability : 0
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USD 2.604
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  1.75 V   125 W         
MR4010-7101


Shindengen IGBT Transistors Power IC
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Shindengen Availability : 0
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USD 2.6044
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          Si     
RGS00TS65DHRC11


IGBT Transistors IGBT FieldStop Trnch 50A; TO-247N; 650V
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ROHM Availability : 0
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USD 2.6072
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Single650 V1.65 V30 V88 A200 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole326 W- 40 C+ 175 C 
STGFW30H65FB


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 2.6139
Multiples of: 30

Single650 V1.55 V20 V60 A250 nA  TO - 3PFTubeSiThrough Hole58 W- 55 C+ 175 C600 - 650V Igbts
FGH40N65UFDTU-F085


IGBT Transistors N-ch / 40A 650V
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ON Semiconductor Availability : 0
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USD 2.6171
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Single650 V +/- 20 V    TO - 247AB - 3TubeSiThrough Hole - 55 C+ 150 CFgh40n65ufd
FGB40T65SPD-F085


IGBT Transistors Trench IGBT
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ON Semiconductor Availability : 0
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USD 2.6178
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Single650 V2.9 V+/- 20 V80 A+/- 400 nA  TO - 263 - 3Cut TapeSiSmd/Smt267 W- 55 C+ 175 CFgb40t65spd
NGTB30N60L2WG


N-CHANNEL IGBT WITH LOW VF SWITCHING DIODE 600V 30A VCE(sat); 1.4V
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USD 2.6178
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         TubeSi     
NGTG15N120FL2WG


IGBT Transistors 1200V/15A VERY FAST IGBT
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ON Semiconductor Availability : 0
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USD 2.6206
Multiples of: 166

         TubeSi     
IHW30N110R3


IGBT Transistors IGBT PRODUCTS
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Infineon Availability : 0
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USD 2.622
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Single1100 V1.55 V20 V60 A100 nA333 W TO - 247TubeSiThrough Hole333 W- 40 C+ 175 CIhw30n110
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