About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGAF40N60UFDTU


IGBT Transistors Ultrafast
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ON Semiconductor Availability : 0
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USD 2.9677

Multiples of: 147

Single600 V3.1 V+/- 20 V40 A+/- 100 nA100 W TO - 3PF - 3TubeSiThrough Hole100 W- 55 C+ 150 CFgaf40n60
STGFW80V60F


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 2.9704

Multiples of: 1

Single600 V1.85 V+/- 20 V120 A250 nA  TO - 3PFTubeSiThrough Hole79 W- 55 C+ 175 C600 - 650V Igbts
FGH40N60SMDF


IGBT Transistors 600V/40A Field Stop IGBT ver. 2
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ON Semiconductor Availability : 0
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USD 2.9704

Multiples of: 1

 600 V1.9 V20 V80 A400 nA349 W TO - 247TubeSiThrough Hole349 W- 55 C+ 150 CFgh40n60
SKW20N60FKSA1


Trans IGBT Chip N-CH 600V 40A 3-Pin(3+Tab) TO-247
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Infineon Availability : 0
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USD 2.9851

Multiples of: 146

         Tube      
STGWA15S120DF3


STMicroelectronics IGBT Transistors
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STMicroelectronics Availability : 0
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USD 2.9965

Multiples of: 1

Single1.2 kV1.55 V+/- 20 V30 A250 nA  TO 247 - 3TubeSiThrough Hole259 W- 55 C+ 175 C900 - 1300V Igbts
IHW40N60R


Infineon Technologies IGBT Transistors IH SeriesRev Conduct IGBT Monolithic Body
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Infineon Availability : 0
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USD 3.0024

Multiples of: 145

Single600 V1.65 V+/- 20 V40 A100 nA  TO - 247 - 3TubeSiThrough Hole305 W- 40 C+ 150 CIhw40n60
STGWF40V60DF


IGBT Transistors IGBT & Power Bipolar
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STMicroelectronics Availability : 0
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USD 3.0083

Multiples of: 30

                
SG50N60DB


Transistor: IGBT; 600V; 50A; TO247AD
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Sirectifier Availability : 0
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USD 3.0096

Multiples of: 1

                
HGTG20N60A4


Transistor: IGBT; 600V; 40A; 290W; TO247
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ON Semiconductor Availability : 0
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USD 3.0113

Multiples of: 1

                
IRGS4062DPBF


Transistor: IGBT; 600V; 48A; 250W; D2PAK
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Infineon Availability : 0
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USD 3.0157

Multiples of: 1

Single600 V1.95 V+/- 20 V48 A 250 W D2PAKTube Smd/Smt - 55 C  
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