About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
FGL40N120ANDTU


Transistor: IGBT; 1.2kV; 40A; 200W; TO264
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ON Semiconductor Availability : 841
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USD 15.6942

Multiples of: 1

      200 W         
CRG40T60AN3S


TO-3P(N) IGBTs ROHS
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CRMICRO Availability : 839
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USD 0.8083

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RGTV60TK65GVC11


IGBT Transistors 650V 30A TO-3PFM Field Stp Trnch IGBT
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ROHM Availability : 827
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USD 3.3063

Multiples of: 1

Single650 V1.5 V30 V33 A200 nA  TO - 3PFMTubeSiThrough Hole76 W- 40 C+ 175 C 
IKB15N60TATMA1


IGBT Transistors INDUSTRY 14
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Infineon Availability : 822
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USD 2.4679

Multiples of: 1

         Reel      
IKP10N60TXKSA1


IGBT Transistors LOW LOSS DuoPack 600V 10A
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Infineon Availability : 816
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USD 0.8107

Multiples of: 1

Single600 V1.5 V+/- 20 V24 A100 nA  TO - 220 - 3TubeSiThrough Hole110 W- 40 C+ 175 CXkp10n60
IKB20N60T


IGBT Transistors LOW LOSS DuoPack 600V 20A
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Infineon Availability : 815
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USD 1.495

Multiples of: 1

Single600 V1.5 V+/- 20 V41 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt166 W- 40 C+ 175 CTrenchstop Igbt
IKP30N65H5XKSA1


Transistor: IGBT; 650V; 36A; 188W; TO220-3; Series: H5
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Infineon Availability : 815
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USD 1.9744

Multiples of: 1

      188 W        H5
DGTD120T40S1PT


IGBT Transistors IGBT 1200V-X TO247 TUBE 0.45K
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Diodes Incorporated Availability : 811
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USD 7.2875

Multiples of: 1

Single1200 V2 V20 V80 A250 nA  TO - 247 - 3TubeSiThrough Hole357 W- 55 C+ 150 C 
IGB50N60TATMA1


Trans IGBT Chip N-CH 600V 90A 3-Pin(2+Tab) D2PAK
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Infineon Availability : 809
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USD 2.714

Multiples of: 1

Single600 V1.5 V+/- 20 V90 A100 nA  TO - 263 - 3Cut TapeSiSmd/Smt333 W- 40 C+ 175 CTrenchstop Igbt
HGTP5N120BND


IGBT Transistors 21a 1200V IGBT NPT Series N-Ch
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ON Semiconductor Availability : 808
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USD 4.5014

Multiples of: 1

Single1200 V2.45 V+/- 20 V21 A+/- 250 nA167 W TO - 220 - 3Tube Through Hole - 55 C+ 150 CHgtp5n120
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