About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
APT20GN60BDQ2G


IGBT Transistors IGBT Fieldstop Low Frequency Combi 600 V 20 A TO-247
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 0
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USD 8.288

Multiples of: 1

      136 W   Field Stop     
STGYA120M65DF2


IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 120 A low loss
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STMicroelectronics Availability : 0
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USD 8.2926

Multiples of: 1

Single650 V1.65 V+/- 20 V160 A+/- 250 uA  MAX247 - 3 SiThrough Hole625 W- 55 C+ 175 CStgya120m65df2
NGTB60N65FL2WG


IGBT Transistors 650V/60A FAST IGBT FSII
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 0
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USD 8.2948

Multiples of: 1

Single650 V1.64 V+/- 20 V100 A200 nA  TO - 247 - 3TubeSiThrough Hole595 W- 55 C+ 175 C 
IXYH50N65C3D1


IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
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IXYS Availability : 0
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USD 8.302

Multiples of: 1

Single650 V1.73 V20 V132 A100 nA  TO - 247 - 3 SiThrough Hole600 W- 55 C+ 175 C 
IRGP4266-EPBF


Trans IGBT Chip N-CH 650V 140A 3-Pin(3+Tab) TO-247AD Tube
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Infineon Availability : 0
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USD 8.3024

Multiples of: 25

      450 W         
IXYH16N170C


Discrete Semiconductor Modules Disc IGBT XPT-Hi Voltage TO-247AD
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IXYS Availability : 0
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USD 8.3258

Multiples of: 1

Single       TO - 247 - 3Tube Through Hole310 W- 55 C+ 175 C 
APT80GA60B


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
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Microchip Availability : 0
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USD 8.4129

Multiples of: 1

Single600 V2 V30 V143 A100 nA  TO - 247 - 3TubeSiThrough Hole625 W- 55 C+ 150 C 
IXXH100N60B3


IGBT Transistors XPT IGBT B3-Class 600V/210Amp
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IXYS Availability : 0
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USD 8.4327

Multiples of: 30

 600 V1.8 V20 V210 A100 nA  TO - 247ADTubeSiThrough Hole830 W- 55 C+ 150 CIxxh100n60
IXGT6N170A


IGBT Transistors 12 Amps 1700 V 7 V Rds
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IXYS Availability : 0
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USD 8.4525

Multiples of: 1

Single1700 V 20 V    TO - 268 - 3TubeSiSmd/Smt - 55 C+ 150 CIxgt6n170
IXYA20N120A4HV


IGBT Transistors DISC IGBT XPT-GENX4
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IXYS Availability : 0
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USD 8.4731

Multiples of: 1

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