TM XPT 600V IGBT V = 600V IXXH100N60B3 CES TM GenX3 I = 100A C110 V 1.80V CE(sat) t = 150ns fi(typ) Extreme Light Punch Through IGBT for 10-30 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 600 V CES J V T = 25C to 175C, R = 1M 600 V CGR J GE G C Tab V Continuous 20 V GES E V Transient 30 V GEM I T = 25C (Chip Capability) 220 A G = Gate C = Collector C25 C I Terminal Current Limit 160 A E = Emitter Tab = Collector LRMS I T = 110C 100 A C110 C I T = 25C, 1ms 480 A CM C I T = 25C 50 A A C E T = 25C 600 mJ AS C Features SSOA V = 15V, T = 150C, R = 2 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load V CES z Optimized for 10-30kHz Switching z t V = 15V, V = 360V, T = 150C 10 s Square RBSOA sc GE CE J z (SCSOA) R = 10, Non Repetitive Avalanche Rated G z Short Circuit Capability P T = 25C 830 W z C C High Current Handling Capability z International Standard Package T -55 ... +175 C J T 175 C JM T -55 ... +175 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L z High Power Density T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD z Low Gate Drive Requirement M Mounting Torque 1.13/10 Nm/lb.in. d Weight 6g Applications z Power Inverters Symbol Test Conditions Characteristic Values z UPS (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z Motor Drives z SMPS BV I = 250A, V = 0V 600 V CES C GE z PFC Circuits V I = 250A, V = V 3.0 5.5 V z GE(th) C CE GE Battery Chargers z Welding Machines I V = V , V = 0V 25 A CES CE CES GE z Lamp Ballasts T = 150C 2 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = 70A, V = 15V, Note 1 1.50 1.80 V CE(sat) C GE T = 150C 1.77 V J 2013 IXYS CORPORATION, All Rights Reserved DS100284B(02/13)IXXH100N60B3 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 22 40 S C CE fs C 4860 pF ies C V = 25V, V = 0V, f = 1MHz 285 pF P oes CE GE 1 2 3 C 83 pF res Q 143 nC g(on) Q I = 70A, V = 15V, V = 0.5 V 37 nC ge C GE CE CES Q 60 nC gc t 30 ns e d(on) Inductive load, T = 25C t 70 ns Terminals: 1 - Gate 2 - Collector J ri 3 - Emitted I = 70A, V = 15V E 1.9 mJ C GE on Dim. Millimeter Inches V = 360V, R = 2 t 120 ns CE G d(off) Min. Max. Min. Max. t 150 ns Note 2 A 4.7 5.3 .185 .209 fi A 2.2 2.54 .087 .102 1 E 2.0 2.8 mJ f of A 2.2 2.6 .059 .098 2 b 1.0 1.4 .040 .055 t 32 ns d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 150C t 60 ns J ri b 2.87 3.12 .113 .123 2 I = 70A, V = 15V E 2.3 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 360V, R = 2 t CE G 150 ns d(off) E 15.75 16.26 .610 .640 t Note 2 200 ns e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 2.8 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.18 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537