About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYH80N90C3


IGBT Transistors IGBT XPT-GENX3
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IXYS Availability : 0
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USD 9.842

Multiples of: 1

        TO - 247AD - 3 SiThrough Hole   Planar
IXGR32N90B2D1


IGBT Transistors 47 Amps 900V 2.9 V Rds
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IXYS Availability : 0
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USD 9.8741

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Single900 V2.9 V20 V    Isoplus247 - 3TubeSiSmd/Smt - 55 C+ 150 C 
QP12W08S-37


SIP-13 Gate Drive ICs ROHS
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MORNSUN Availability : 0
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USD 9.8774

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APT102GA60L


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 8 - Single
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Microchip Availability : 0
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USD 9.879

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         TubeSi     
AIKQ120N60CTXKSA1


IGBT Transistors DISCRETES
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Infineon Availability : 0
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USD 10.0112

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         TubeSi    600V Trenchstop
APT100GT60B2RG


IGBT Transistors Insulated Gate Bipolar Transistor - NPT Med Frequency - Single
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Microchip Availability : 0
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USD 10.0219

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          Si     
APT70GR65B2SCD30


IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
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Microchip Availability : 0
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USD 10.0374

Multiples of: 1

         TubeSi     
IKQ120N60TAXKSA1


Transistor: IGBT; 600V; 120A; 833W; TO247-3
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Infineon Availability : 0
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USD 10.1031

Multiples of: 39

      833 W   Trenchstop     
IXYH82N120C3


IGBT Transistors XPT IGBT C3-Class 1200V/160A
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IXYS Availability : 0
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USD 10.1403

Multiples of: 1

Single1200 V2.75 V30 V160 A100 nA  TO - 247AD - 3TubeSiThrough Hole1040 W- 55 C+ 150 CIxyh82n120
STGY80H65DFB


IGBT Transistors Trench gte FieldStop IGBT 650V 80A
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STMicroelectronics Availability : 0
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USD 10.1507

Multiples of: 1

Single650 V1.9 V+/- 20 V120 A250 nA469 W MAX247 - 3TubeSiThrough Hole469 W- 55 C+ 175 CStgy80h65
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