TM 1200V XPT IGBT V = 1200V IXYH82N120C3 CES TM GenX3 I = 82A C110 V 3.2V CE(sat) t = 93ns fi(typ) High-Speed IGBT for 20-50 kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE G V Continuous 20 V GES C Tab E V Transient 30 V GEM I T = 25C (Chip Capability) 200 A C25 C G = Gate C = Collector I Leads Current Limit 160 A LRMS E = Emitter Tab = Collector I T = 110C 82 A C110 C I T = 25C, 1ms 380 A CM C I T = 25C 41 A A C E T = 25C 800 mJ AS C Features SSOA V = 15V, T = 150C, R = 2 I = 164 A GE VJ G CM (RBSOA) Clamped Inductive Load V V z CE CES Optimized for Low Switching Losses z Square RBSOA P T = 25C 1250 W C C z Positive Thermal Coefficient of T -55 ... +175 C J Vce(sat) z T 175 C Avalanche Rated JM z High Current Handling Capability T -55 ... +175 C stg z International Standard Package T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C SOLD Advantages M Mounting Torque 1.13/10 Nm/lb.in. d z Weight 6g High Power Density z Low Gate Drive Requirement Applications z High Frequency Power Inverters z UPS Symbol Test Conditions Characteristic Values z Motor Drives (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J z SMPS z BV I = 250A, V = 0V 1200 V PFC Circuits CES C GE z Battery Chargers V I = 250A, V = V 3.0 5.0 V GE(th) C CE GE z Welding Machines z Lamp Ballasts I V = V , V = 0V 25 A CES CE CES GE T = 150C 500 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 82A, V = 15V, Note 1 2.75 3.20 V CE(sat) C GE T = 150C 3.76 V J 2012 IXYS CORPORATION, All Rights Reserved DS100335B(12/12)IXYH82N120C3 Symbol Test Conditions Characteristic Values TO-247 (IXYH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 30 50 S fs C CE C 4060 pF ies C V = 25V, V = 0V, f = 1MHz 285 pF P oes CE GE 1 2 3 C 110 pF res Q 215 nC g(on) Q I = 75A, V = 15V, V = 0.5 V 26 nC ge C GE CE CES Q 84 nC gc t 29 ns e d(on) t 78 ns Inductive load, T = 25C Terminals: 1 - Gate 2 - Collector ri J 3 - Emitter E 4.95 mJ I = 80A, V = 15V on C GE Dim. Millimeter Inches t 192 280 ns V = 0.5 V , R = 2 d(off) CE CES G Min. Max. Min. Max. t 93 ns fi A 4.7 5.3 .185 .209 Note 2 A 2.2 2.54 .087 .102 E 2.78 5.00 mJ 1 f of A 2.2 2.6 .059 .098 2 t 29 ns b 1.0 1.4 .040 .055 d(on) b 1.65 2.13 .065 .084 1 Inductive load, T = 125C t 90 ns J ri b 2.87 3.12 .113 .123 2 I = 80A, V = 15V E 7.45 mJ C .4 .8 .016 .031 C GE on D 20.80 21.46 .819 .845 V = 0.5 V , R = 2 t 200 ns CE CES G d(off) E 15.75 16.26 .610 .640 t 95 ns Note 2 e 5.20 5.72 0.205 0.225 fi L 19.81 20.32 .780 .800 E 3.70 mJ off L1 4.50 .177 P 3.55 3.65 .140 .144 R 0.12 C/W thJC Q 5.89 6.40 0.232 0.252 R 0.21 C/W thCS R 4.32 5.49 .170 .216 S 6.15 BSC 242 BSC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537