About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXGN72N60C3H1


IGBT Transistors G-SERIES A3/B3/C3 GENX3 IGBT 600V 52A
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IXYS Availability : 0
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USD 24.7783

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 600 V2.1 V20 V78 A100 nA  SOT - 227B - 4TubeSiSmd/Smt360 W- 55 C+ 150 CIxgn72n60
IXGH30N60C3C1


IGBT Transistors G-SERIES GENX3SIC IGBT 600V 30A
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IXYS Availability : 0
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USD 24.789

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         Tube     Ixgh30n60
IXXX200N60B3


IGBT Transistors Disc IGBT XPT-GenX3 TO-247AD
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IXYS Availability : 0
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USD 24.794

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Single600 V1.4 V20 V380 A200 nA  PLUS - 247 - 3 SiThrough Hole1.63 kW- 55 C+ 175 C 
IXXN200N60B3


IGBT Transistors XPT 600V IGBT GenX3 XPT IGBT
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IXYS Availability : 0
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USD 24.882

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         TubeSi    Ixxn200n60
APT50GF120B2RG


IGBT Modules Insulated Gate Bipolar Transistor - NPT Low Frequency - Single
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Microchip Availability : 0
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USD 25.172

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      781 W   NPT     
AUIRGPS4070D0


IGBT Transistors DISCRETES
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Infineon Availability : 0
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USD 25.214

Multiples of: 1

Single600 V1.7 V20 V240 A100 nA Aec - Q101SUPER - 247 - 3TubeSiThrough Hole750 W- 55 C+ 175 C 
IXYX30N170CV1


IGBT Transistors 1700V/108A High Voltage XPT IGBT
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IXYS Availability : 0
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USD 25.228

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Single1700 V3 V20 V108 A100 nA  TO - 247PLUS - 3TubeSiThrough Hole937 W- 55 C+ 175 C 
IXGX82N120A3


IGBT Transistors GenX3 1200V IGBTs
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IXYS Availability : 0
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USD 25.5615

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        TO - 247 - 3TubeSiThrough Hole   Ixgx82n120
IXYT25N250CHV


IGBT Transistors 2500V/95A , HV XPT IGBT
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IXYS Availability : 0
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USD 25.6225

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Single2500 V3.4 V20 V95 A+/- 100 nA  TO - 268HV - 2TubeSiSmd/Smt937 W- 55 C+ 175 CHigh Voltage
IXGK82N120A3


IGBT Transistors GenX3 1200V IGBTs
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IXYS Availability : 0
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USD 25.6294

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         TubeSi    Ixgk82n120
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