Preliminary Technical Information TM V = 600V XPT 600V IGBT IXXN200N60B3 CES TM I = 160A GenX3 C110 V 1.7V CE(sat) t = 110ns Extreme Light Punch Through fi(typ) IGBT for 10-30kHz Switching E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E c V T = 25C to 175C 600 V CES J G V T = 25C to 175C, R = 1M 600 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM I T = 25C (Chip Capability ) 280 A E c C25 C I Leads Current Limit 200 A C LRMS I T = 110C 160 A C110 C G = Gate, C = Collector, E = Emitter I T = 25C, 1ms 1000 A CM C c either emitter terminal can be used as I T = 25C 100 A Main or Kelvin Emitter A C E T = 25C 1 J AS C SSOA V = 15V, T = 150C, R = 1 I = 400 A GEC VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features t V = 15V, V = 360V, T = 150C 10 s sc GE CE J z Optimized for Low Conduction and (SCSOA) R = 10, Non Repetitive G Switching Losses z P T = 25C 940 W miniBLOC, with Aluminium Nitride C C Isolation T -55 ... +175 C J z International Standard Package T 175 C z JM Isolation Voltage 2500V~ T -55 ... +175 C z stg Optimized for 10-30kHz Switching z Square RBSOA V 50/60Hz t = 1min 2500 V~ ISOL z Avalanche Rated I 1mA t = 1s 3000 V~ ISOL z Short Circuit Capability z M Mounting Torque 1.5/13 Nm/lb.in. High Current Handling Capability d Terminal Connection Torque 1.3/11.5 Nm/lb.in. Weight 30 g Advantages z High Power Density z Low Gate Drive Requirement Symbol Test Conditions Characteristic Values (T = 25C, Unless Otherwise Specified) Min. Typ. Max. J Applications BV I = 250A, V = 0V 600 V CES C GE z Power Inverters V I = 250A, V = V 3.5 6.0 V GE(th) C CE GE z UPS z I V = V , V = 0V 50 A Motor Drives CES CE CES GE z SMPS T = 150C 3 mA J z PFC Circuits I V = 0V, V = 20V 200 nA z GES CE GE Battery Chargers z Welding Machines V I = 100A, V = 15V, Note 1 1.40 1.70 V CE(sat) C GE z Lamp Ballasts T = 150C 1.58 V J 2013 IXYS CORPORATION, All Rights Reserved DS100453A(02/13)IXXN200N60B3 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXXN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 27 45 S fs C CE C 9970 pF ies C V = 25V, V = 0V, f = 1MHz 570 pF oes CE GE C 183 pF res Q 315 nC g(on) Q I = 200A, V = 15V, V = 0.5 V 98 nC ge C GE CE CES Q 130 nC gc t 48 ns d(on) Inductive load, T = 25C t 100 ns J ri I = 100A, V = 15V E 2.85 mJ C GE on V = 360V, R = 1 t 160 ns CE G d(off) t 110 ns Note 2 fi E 2.90 4.40 mJ f of t 46 ns d(on) Inductive load, T = 150C t 94 ns J ri I = 100A, V = 15V E 4.40 mJ C GE on V = 360V, R = 1 t 180 ns CE G d(off) t 215 ns Note 2 fi E 3.45 mJ off R 0.16 C/W thJC R 0.05 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G PRELIMANARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537