About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IXYN150N60B3


IGBT Transistors IGBT XPT-GENX3 (MINI
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IXYS Availability : 0
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USD 45.08

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Single600 V1.77 V20 V250 A200 nA  SOT - 227B - 4 SiScrew Mount830 W- 55 C+ 175 C 
IXBX25N250


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 0
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USD 45.4499

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Single2.5 kV3.3 V20 V55 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole300 W- 55 C+ 150 CVery High Voltage
IXYN50N170CV1


IGBT Transistors 1700V/120A High Volt
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IXYS Availability : 0
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USD 46.191

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Single1700 V2.8 V20 V120 A100 nA  SOT - 227B - 4TubeSiSmd/Smt880 W- 55 C+ 175 C 
MG75HF12MIC1-A1-0000


IGBTs ROHS
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Yangjie Availability : 0
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USD 46.3215

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APT45GP120JDQ2


IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
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Microchip Availability : 0
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USD 46.5751

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         TubeSi     
APT50GT120JRDQ2


IGBT Transistors IGBT NPT Medium Frequency Combi 1200 V 50 A ISOTOP
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Microchip Availability : 0
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USD 46.858

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          NPT     
GD100HFX65C1S


IGBTs ROHS
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STARPOWER Availability : 0
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USD 46.995

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IXBH20N300


IGBT Transistors IGBT BIMSFT-VERYHIVOLT
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IXYS Availability : 0
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USD 47.222

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Single3 kV2.7 V+/- 20 V50 A+/- 100 nA  TO - 247 - 3TubeSiThrough Hole250 W- 55 C+ 150 C 
MMIX1X340N65B4


Discrete Semiconductor Modules DISC IGBT SMPD PKG-STANDARD
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IXYS Availability : 0
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USD 47.6052

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Single          Smd/Smt1200 W- 55 C+ 175 C 
VS-CPV364M4KPBF


IGBT Transistors 600 Volt 13 Amp
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Vishay Availability : 0
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USD 48.6011

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Hex600 V +/- 20 V    IMS - 2 - 13BulkSiThrough Hole - 55 C+ 150 C 
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