Advance Technical Information High Voltage V = 1700V IXYN50N170CV1 CES TM XPT IGBT I = 50A C110 w/ Diode V 3.7V CE(sat) t = 95ns fi(typ) E SOT-227B, miniBLOC E153432 Symbol Test Conditions Maximum Ratings E G V T = 25C to 175C 1700 V CES J V T = 25C to 175C, R = 1M 1700 V CGR J GE V Continuous 20 V GES V Transient 30 V GEM E C I T = 25C 120 A C25 C I T = 110C 50 A C110 C G = Gate, C = Collector, E = Emitter I T = 110C 42 A F110 C either emitter terminal can be used as I T = 25C, 1ms 485 A CM C Main or Kelvin Emitter SSOA V = 15V, T = 150C, R = 1 I = 200 A GE VJ G CM (RBSOA) Clamped Inductive Load 1360 V P T = 25C 880 W C C T -55 ... +175 C Features J T 175 C JM T -55 ... +175 C International Standard Package stg miniBLOC, with Aluminium Nitride V 50/60Hz t = 1min 2500 V~ ISOL Isolation I 1mA t = 1s 3000 V~ ISOL 2500V~ Isolation Voltage M Mounting Torque 1.5/13 Nm/lb.in Anti-Parallel Diode d Terminal Connection Torque 1.3/11.5 Nm/lb.in High Voltage Package High Blocking Voltage Weight 30 g Low Saturation Voltage Advantages Symbol Test Conditions Characteristic Values Low Gate Drive Requirement (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J High Power Density BV I = 250 A, V = 0V 1700 V CES C GE V I = 250 A, V = V 3.0 5.0 V GE(th) C CE GE I V = V , V = 0V 25 A Applications CES CE CES GE V = 0.8 V , V = 0V T = 125C 5 mA CE CES GE J Switch-Mode and Resonant-Mode I V = 0V, V = 20V 100 nA Power Supplies GES CE GE Uninterruptible Power Supplies (UPS) V I = 50A, V = 15V, Note 1 2.8 3.7 V CE(sat) C GE Laser Generators T = 150C 3.9 V J Capacitor Discharge Circuits AC Switches 2017 IXYS CORPORATION, All Rights Reserved DS100801(02/17)IXYN50N170CV1 Symbol Test Conditions Characteristic Values SOT-227B miniBLOC (IXYN) (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 50A, V = 10V, Note 1 30 50 S fs C CE R Gate Input Resistance 2.0 Gi C 5500 pF ies C V = 25V, V = 0V, f = 1MHz 380 pF oes CE GE C 105 pF res Q 260 nC g(on) Q I = 50A, V = 15V, V = 0.5 V 28 nC ge C GE CE CES Q 110 nC gc t 20 ns d(on) Inductive load, T = 25C J t 44 ns ri = 50A, V = 15V I C GE E 8.7 mJ on V = 0.5 V , R = 1 t CE CES G 180 ns d(off) Note 2 t 95 ns fi E 5.6 mJ off t 22 ns d(on) Inductive load, T = 150C J t 40 ns ri I = 50A, V = 15V E C GE 11.9 mJ on V = 0.5 V , R = 1 CE CES G t 236 ns d(off) Note 2 t 160 ns fi E 8.2 mJ off R 0.17 C/W thJC R 0.05 C/W thCS Reverse Diode (FRED) (T = 25C, Unless Otherwise Specified) Characteristic Value J Symbol Test Conditions Min. Typ. Max. V 2.5 3.2 V F I = 50A,V = 0V, Note 1 F GE T = 150C 3.2 V J I 40 A RM I = 50A,V = 0V, -di /dt = 500A/ s, F GE F V = 1200V, T = 150C t 255 ns R J rr R 0.42C/W thJC Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experi- ence, and constitute aconsidered reflectio of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537