About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
IGP50N60T


Transistor: IGBT; 600V; 50A; 333W; TO220-3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 564
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USD 2.208

Multiples of: 1

      333 W         
CRG50T60AK3SD


TO-247 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

CRMICRO Availability : 560
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USD 1.3166

Multiples of: 1

                
KGF60N65KDF-U/H


TO-247 IGBTs ROHS
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KEC Availability : 558
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USD 1.1684

Multiples of: 1

                
NCE60TD60BT


TO-247-3 IGBTs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NCE Power Availability : 551
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USD 1.8589

Multiples of: 1

                
STGWA100H65DFB2


IGBT Transistors Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT
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STMicroelectronics Availability : 551
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USD 3.988

Multiples of: 1

                
IGB50N60T


Transistor: IGBT; 600V; 50A; 333W; D2PAK
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Infineon Availability : 547
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USD 2.6815

Multiples of: 1

      333 W         
FGY100T65SCDT


IGBT Transistors FS3TIGBT TO247 100A 650V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 546
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USD 6.875

Multiples of: 1

Single650 V1.5 V25 V200 A400 nA  TO - 247 - 3TubeSiThrough Hole750 W- 55 C+ 175 C 
APT50GN60BDQ2G


IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Microchip Availability : 545
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USD 6.785

Multiples of: 1

Single600 V1.5 V30 V107 A600 nA  TO - 247 - 3TubeSiThrough Hole366 W- 55 C+ 175 C 
IRG4BC30SPBF


IGBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 536
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USD 2.0625

Multiples of: 1

Single600 V1.6 V+/- 20 V34 A100 nA100 W TO - 220 - 3TubeSiThrough Hole100 W- 55 C+ 150 C 
DGTD65T15H2TF


IGBT Transistors IGBT 600V-X
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Diodes Incorporated Availability : 533
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USD 1.0614

Multiples of: 1

Single650 V1.65 V 30 A+/- 100 nA  I TO - 220AB - 3  Through Hole48 W- 40 C+ 175 C 
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