TM XPT 650V IGBT V = 650V IXXH60N65B4 CES TM GenX4 I = 60A C110 V 2.2V CE(sat) t = 43ns fi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings V T = 25C to 175C 650 V CES J V T = 25C to 175C, R = 1M 650 V G CGR J GE C Tab E V Continuous 20 V GES V Transient 30 V GEM G = Gate C = Collector I T = 25C (Chip Capability) 145 A C25 C E = Emitter Tab = Collector I T = 110C 60 A C110 C I T = 25C, 1ms 265 A CM C SSOA V = 15V, T = 150C, R = 5 I = 120 A GE VJ G CM (RBSOA) Clamped Inductive Load V V CE CES Features t V = 15V, V = 360V, T = 150C 10 s sc GE CE J (SCSOA) R = 82, Non Repetitive Optimized for 5-30kHz Switching G Square RBSOA P T = 25C 536 W C C Short Circuit Capability T -55 ... +175 C International Standard Package J T 175 C JM T -55 ... +175 C stg Advantages T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062in.) from Case for 10s 260 C High Power Density SOLD Extremely Rugged M Mounting Torque 1.13/10 Nm/lb.in d Low Gate Drive Requirement Weight 6g Applications Power Inverters UPS Motor Drives SMPS Symbol Test Conditions Characteristic Values (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. PFC Circuits J Battery Chargers BV I = 250 A, V = 0V 650 V CES C GE Welding Machines V I = 250 A, V = V 4.0 6.5 V Lamp Ballasts GE(th) C CE GE I V = V , V = 0V 5 A CES CE CES GE T = 150C 250 A J I V = 0V, V = 20V 100 nA GES CE GE V I = 60A, V = 15V, Note 1 1.8 2.2 V CE(sat) C GE T = 150C 2.1 V J 2016 IXYS CORPORATION, All Rights Reserved DS100495C(9/16)IXXH60N65B4 Symbol Test Conditions Characteristic Values TO-247 (IXXH) Outline (T = 25C Unless Otherwise Specified) Min. Typ. Max. J D A A B 0P 0K M D B M A2 E g I = 60A, V = 10V, Note 1 17 28 S fs C CE Q S D2 R C 2590 pF ies D1 D C V = 25V, V = 0V, f = 1MHz 133 pF 0P1 oes CE GE 4 R1R1R1R1 C 40 pF 1 2 3 res IXYS OPTION L1 C Q 86 nC g(on) E1 L Q I = 60A, V = 15V, V = 0.5 V 22 nC ge C GE CE CES Q 35 nC gc A1 b c b2 t 19 ns b4 d(on) 1 - Gate e 2,4 - Collector t 80 ns Inductive load, T = 25C J M C A M ri J 3 - Emitter E 3.2 mJ I = 60A, V = 15V on C GE t 107 ns V = 400V, R = 5 d(off) CE G t 43 ns fi Note 2 E 1.1 mJ f of t 20 ns d(on) Inductive load, T = 150C t 74 ns J ri I = 60A, V = 15V E 4.2 mJ C GE on V = 400V, R = 5 t 120 ns CE G d(off) t 88 ns Note 2 fi E 1.8 mJ off R 0.28 C/W thJC R 0.21 C/W thCS Notes: 1. Pulse test, t 300 s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537