About IGBT Transistors

IGBT Transistors

An IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device that combines the high switching speed of a metal-oxide-semiconductor field-effect transistor (MOSFET) and the high-current and low-saturation-voltage capability of a bipolar junction transistor (BJT). It is used in inverters, power converters, motor drives, and other power electronic applications. An IGBT has an isolated gate electrode, allowing it to be driven either by voltage or current. When operating, the gate voltage is applied to the gate electrode to control the current flow through the device. Due to its versatile design and high switching speed, it is the most commonly used power switch in most power applications.
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Image  Information Image Stock Code(▲▼)Description
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Enter Qty ConfigurationCollector- Emitter Voltage VCEO MaxCollector-Emitter Saturation VoltageMaximum Gate Emitter VoltageContinuous Collector Current at 25 CGate-Emitter Leakage CurrentPower DissipationQualificationPackage / CasePackagingTechnologyMounting StylePd - Power DissipationMinimum Operating TemperatureMaximum Operating TemperatureSeries
  
                    
AOTF5B65M1


Transistor: IGBT; 650V; 5A; 10W; TO220F; Eoff: 0.12mJ; Eon: 0.09mJ
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Alpha & Omega Availability : 378
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USD 0.6237

Multiples of: 1

  1.87 V   10 W         
IKW50N65WR5XKSA1


IGBT Transistors The reverse conducting TRENCHSTOP 5 WR5 IGBT was specifically optimized for full rated hard switching turn off typically found in Welding inverter application. Excellent price/performance ratio of WR5 IGBT allows access to the high performance techno
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 377
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USD 2.024

Multiples of: 1

Single650 V1.4 V20 V80 A100 nA  TO - 247 - 3TubeSiThrough Hole282 W- 40 C+ 175 CTrenchstop 5 Wr5
RGW00TS65GC11


IGBT Transistors 650V 50A TO-247N Field Stp Trnch IGBT
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM Availability : 373
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USD 3.372

Multiples of: 1

Single650 V1.5 V30 V96 A200 nA  TO - 247N - 3TubeSiThrough Hole254 W- 40 C+ 175 C 
AIKB50N65DH5ATMA1


IGBT Transistors DISCRETE SWITCHES
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Infineon Availability : 370
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USD 3.8065

Multiples of: 1

         Cut Tape      
FGH4L50T65SQD


IGBT Transistors FS4 T TO247 50A 650V 4L
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ON Semiconductor Availability : 368
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USD 3.675

Multiples of: 1

                
FGHL75T65MQDTL4


IGBT Transistors FS4 MID SPEED IGBT 650V 75A TO247-4L WITH FULL RATED CURRENT DIODE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor Availability : 368
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USD 5.1375

Multiples of: 1

                
IXGH72N60A3


IGBT Transistors 72 Amps 600V 1.35 Rds
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IXYS Availability : 368
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USD 5.613

Multiples of: 1

Single600 V1.35 V20 V75 A100 nA  TO - 247AD - 3TubeSiThrough Hole540 W- 55 C+ 150 CIxgh72n60
CRG75T65AK5HD


TO-247 IGBTs ROHS
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CRMICRO Availability : 366
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USD 2.598

Multiples of: 1

                
IKW30N65H5XKSA1


Transistor: IGBT; 650V; 35A; 94W; TO247-3; Series: H5
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Infineon Availability : 362
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USD 2.116

Multiples of: 1

      94 W   Trenchstop 5    H5
RGS80TSX2DHRC11


IGBT Transistors 1200V 40A FIELD STOP TRENCH
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ROHM Availability : 362
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USD 4.7321

Multiples of: 1

Single1200 V1.7 V30 V 500 nA Aec - Q101TO - 247N - 3TubeSiThrough Hole555 W- 40 C+ 175 C 
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