IXGH 28N120B V = 1200 V High Voltage IGBT CES I = 50 A IXGT 28N120B C25 V = 3.5 V CE(sat) t = 160 ns fi(typ) TO-268 (IXGT) Symbol Test Conditions Maximum Ratings V T = 25C to 150C 1200 V CES J V T = 25C to 150C R = 1 M 1200 V CGR J GE G V Continuous 20 V GES E C (TAB) V Transient 30 V GEM I T = 25C50A C25 C TO-247 AD (IXGH) I T = 110C28A C110 C I T = 25C, 1 ms 150 A CM C SSOA V = 15 V, T = 125C, R = 5 I = 120 A GE VJ G CM (RBSOA) Clamped inductive load 0.8 V C (TAB) CES G C P T = 25C 250 W E C C T -55 ... +150 C J G = Gate, C = Collector, T 150 C JM E = Emitter, TAB = Collector T -55 ... +150 C stg Maximum Lead temperature for soldering 300 C 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s 260 C Features High Voltage IGBT for resonant M Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. power supplies d - Induction heating Weight TO-247 AD 6 g - Rice cookers TO-268 4 g International standard packages JEDEC TO-268 and JEDEC TO-247 AD Low switching losses, low V (sat) MOS Gate turn-on Symbol Test Conditions Characteristic Values - drive simplicity (T = 25C, unless otherwise specified) J min. typ. max. Advantages BV I = 250 A , V = 0 V 1200 V CES C GE High power density V I = 250 A, V = V 2.5 5 V GE(th) C CE GE Suitable for surface mounting I V = V , V = 0 V T = 25C25 A Easy to mount with 1 screw, CES CE CES GE J (isolated mounting screw hole) I V = 0 V, V = 20 V 100 nA GES CE GE V I = 28A, V = 15 V 2.8 3.5 V CE(sat) C GE T = 125C 2.75 V J 2004 IXYS All rights reserved DS98987E(04/04)IXGH 28N120B IXGT 28N120B Symbol Test Conditions Characteristic Values (T = 25C, unless otherwise specified) TO-247 AD Outline J min. typ. max. g I = 28A V = 10 V, 15 23 S fs C CE Pulse test, t 300 s, duty cycle 2 % P C 1700 pF ies C V = 25 V, V = 0 V, f = 1 MHz 120 pF oes CE GE C 45 pF res Q 92 nC g Q I = 28A, V = 15 V, V = 0.5 V 13 nC e ge C GE CE CES Dim. Millimeter Inches Q 35 nC gc Min. Max. Min. Max. A 4.7 5.3 .185 .209 t 30 ns d(on) A 2.2 2.54 .087 .102 1 Inductive load, T = 25C t J 20 ns A 2.2 2.6 .059 .098 ri 2 b 1.0 1.4 .040 .055 I = 28 A, V = 15 V t C GE 210 280 ns d(off) b 1.65 2.13 .065 .084 1 V = 0.8 V , R = R = 5 CE CES G off b 2.87 3.12 .113 .123 t 170 320 ns 2 fi C .4 .8 .016 .031 E 2.2 5.0 mJ D 20.80 21.46 .819 .845 off E 15.75 16.26 .610 .640 t 35 ns e 5.20 5.72 0.205 0.225 d(on) L 19.81 20.32 .780 .800 t 28 ns ri L1 4.50 .177 Inductive load, T = 125C P 3.55 3.65 .140 .144 E J 28N120B 0.3 mJ on Q 5.89 6.40 0.232 0.252 28N120BD1 1.4 mJ I = 28A, V = 15 V C GE R 4.32 5.49 .170 .216 t V = 0.8 V , R = R = 5 250 ns S 6.15 BSC 242 BSC d(off) CE CES G off t 340 ns fi TO-268 Outline E 4.6 mJ off R 0.5 K/W thJC R (TO-247) 0.25 K/W thCK Dim. Millimeter Inches Min. Max. Min. Max. Min Recommended Footprint A 4.9 5.1 .193 .201 A 2.7 2.9 .106 .114 1 A .02 .25 .001 .010 2 b 1.15 1.45 .045 .057 b 1.9 2.1 .75 .83 2 C .4 .65 .016 .026 D 13.80 14.00 .543 .551 E 15.85 16.05 .624 .632 E 13.3 13.6 .524 .535 1 e 5.45 BSC .215 BSC H 18.70 19.10 .736 .752 L 2.40 2.70 .094 .106 L1 1.20 1.40 .047 .055 L2 1.00 1.15 .039 .045 L3 0.25 BSC .010 BSC L4 3.80 4.10 .150 .161 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505 of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344