TM 1200V XPT Gen 4 V = 1200V IXYK110N120C4 CES IGBT I = 110A C110 V 2.40V CE(sat) t = 37ns fi(typ) High Speed IGBT for up to 20-50kHz Switching TO-264 (IXYK) Symbol Test Conditions Maximum Ratings V T = 25C to 175C 1200 V CES J V T = 25C to 175C, R = 1M 1200 V CGR J GE G C V Continuous 20 V GES E V Transient 30 V GEM C (Tab) I T = 25C (Chip Capability) 310 A C25 C G = Gate E = Emitter I Terminal Current Limit 160 A LRMS C = Collector Tab = Collector I T = 110C 110 A C110 C I T = 25C, 1ms 740 A CM C SSOA V = 15V, T = 150C, R = 2 I = 220 A GE VJ G CM (RBSOA) Clamped Inductive Load 0.8 V V CES P T = 25C 1360 W Features C C T -55 ... +175 C J Optimized for Low Switching Losses T 175 C JM Positive Thermal Coefficient of T -55 ... +175 C stg Vce(sat) International Standard Package T Maximum Lead Temperature for Soldering 300 C L T 1.6 mm (0.062 in.) from Case for 10s 260 C SOLD F Mounting Force 1.13 / 10 Nm/lb.in Advantages C Weight 10 g High Power Density Low Gate Drive Requirement Applications Power Inverters UPS Symbol Test Conditions Characteristic Values Motor Drives (T = 25 C, Unless Otherwise Specified) Min. Typ. Max. J SMPS BV I = 250 A, V = 0V 1200 V PFC Circuits CES C GE Battery Chargers V I = 3mA, V = V 4.5 6.5 V GE(th) C CE GE Welding Machines Lamp Ballasts I V = V , V = 0V 25 A CES CE CES GE T = 150 C 1.5 mA J I V = 0V, V = 20V 100 nA GES CE GE V I = I , V = 15V, Note 1 1.90 2.40 V CE(sat) C C110 GE T = 150 C 2.27 V J 2021 Littelfuse, Inc. DS100959B(10/21)IXYK110N120C4 Symbol Test Conditions Characteristic Values (T = 25C Unless Otherwise Specified) Min. Typ. Max. J g I = 60A, V = 10V, Note 1 40 68 S fs C CE C 5420 pF ies C V = 25V, V = 0V, f = 1MHz 335 pF oes CE GE C 220 pF res Q 330 nC g(on) Q I = I , V = 15V, V = 0.5 V 55 nC ge C C110 GE CE CES Q 138 nC gc t 40 ns d(on) t 48 ns Inductive load, T = 25C ri J E I = 50A, V = 15V 3.6 mJ on C GE t 320 ns V = 0.5 V , R = 2 d(off) CE CES G t 37 ns fi Note 2 E 1.9 mJ off t 36 ns d(on) Inductive load, T = 150C t 37 ns J ri I = 50A, V = 15V E 5.3 mJ C GE on V = 0.5 V , R = 2 t 326 ns CE CES G d(off) t Note 2 90 ns fi E 3.2 mJ off R 0.11 C/W thJC R 0.15 C/W thCS Notes: 1. Pulse test, t 300s, duty cycle, d 2%. 2. Switching times & energy losses may increase for higher V (clamp), T or R . CE J G Littelfuse reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2 by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537