About MOSFET

MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Pd - Power Dissipation
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  Qg - Gate Charge
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
L2N7002SLLT1G


SOT-23 MOSFETs ROHS
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Leshan Availability : 19397672
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USD 0.004

Multiples of: 100

                   
BSS123-7-F


100V 170mA 300mW 6O@10V,170mA N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated Availability : 4586160
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USD 0.0161

Multiples of: 3000

170 mA100 V6 OhmsN - Channel  - 55 C+ 150 C300 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V Enhancement  
2N7002E-7-F


60V 250mA 3O@10V,250mA 370mW N Channel SOT-23 MOSFETs ROHS
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Diodes Incorporated Availability : 3660780
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USD 0.0233

Multiples of: 3000

300 mA60 V3 OhmsN - Channel 1 V- 55 C+ 150 C540 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V223 pCEnhancement  
DMN10H120SFG-13


Diodes Incorporated MOSFET FET BVDSS 61V 100V N-Ch 4.8A 3Vgs 549pF
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Diodes Incorporated Availability : 3003120
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USD 0.2774

Multiples of: 3000

3.8 A100 V68 mOhmsN - Channel 1.5 V- 55 C+ 150 C1 WSmd/SmtPowerdi3333 - 8Tape And ReelSi1 Channel20 V10.6 nCEnhancement  
SI1022R-T1-GE3


MOSFET 60V Vds 20V Vgs SC75A
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Vishay Availability : 2895450
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USD 0.1267

Multiples of: 3000

330 mA60 V2.25 OhmsN - Channel 1 V- 55 C+ 150 C250 mWSmd/SmtSOT - 416 - 3Cut TapeSi1 Channel10 V0.6 nCEnhancement Trenchfet
BSS84DWQ-7


Transistor: P-MOSFET x2; unipolar; -50V; -0.13A; 0.3W; SOT363
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Diodes Incorporated Availability : 2851800
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USD 0.1105

Multiples of: 3000

                   
2N7002KW-TP


MOSFET N-Ch Enh FET 60Vds 20Vgs 340mA 200mW
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Micro Commercial Components (MCC) Availability : 2604450
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USD 0.0195

Multiples of: 3000

340 mA60 V5 OhmsN - Channel 1 V- 55 C+ 150 C200 mWSmd/SmtSOT - 323 - 3Cut TapeSi1 Channel10 V    
Hot SIR626ADP-T1-RE3


MOSFET N-Channel 60-V
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Vishay Availability : 1555414
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USD 0.95

Multiples of: 1

165 A60 V1.75 mOhmsN - Channel 3.5 V- 55 C+ 150 C104 WSMD/SMT Trenchfet , Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V55 nCEnhancement TrenchFET
2N7002NXAKR


MOSFET 60 V single N-channel Trench MOSFET
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Nexperia Availability : 1554329
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USD 0.0161

Multiples of: 1

300 mA60 V4.5 OhmsN - Channel 1.1 V- 55 C+ 150 C325 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel20 V0.33 nCEnhancement  
2N7002-TP


N-Channel 60 V 115mA (Ta) 200mW (Ta) Surface Mount SOT-23
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Micro Commercial Components (MCC) Availability : 1553940
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USD 0.0118

Multiples of: 3000

115 mA60 V7.5 OhmsN - Channel    200 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel     
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