X-On Electronics has gained recognition as a prominent supplier of 2N7002E-7-F MOSFETs across the USA, India, Europe, Australia, and various other global locations. 2N7002E-7-F MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

2N7002E-7-F Diodes Incorporated

2N7002E-7-F electronic component of Diodes Incorporated
2N7002E-7-F Diodes Incorporated
2N7002E-7-F MOSFETs
2N7002E-7-F Semiconductors

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See Product Specifications
Part No. 2N7002E-7-F
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: 60V 250mA 3O@10V,250mA 370mW N Channel SOT-23 MOSFETs ROHS
Small-signal, surface-mount MOSFET transistor with high-speed switching capabilities.
Datasheet: 2N7002E-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0252 ea
Line Total: USD 75.6 
Availability - 3620040
Ship by Mon. 24 Mar to Fri. 28 Mar
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 2N7002E-7-F More Buying Options & Price Grid(s)

Availability Price Quantity
1467
Ship by Mon. 24 Mar to Fri. 28 Mar
MOQ : 1634
Multiples : 1
1634 : USD 0.0398

3620040
Ship by Mon. 24 Mar to Fri. 28 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0252
9000 : USD 0.0246
15000 : USD 0.0243
45000 : USD 0.0229
75000 : USD 0.0224

2619
Ship by Mon. 31 Mar to Thu. 03 Apr
MOQ : 10
Multiples : 10
10 : USD 0.0649
100 : USD 0.0516
300 : USD 0.0448
3000 : USD 0.0306
6000 : USD 0.0277
9000 : USD 0.026

16361
Ship by Thu. 20 Mar to Mon. 24 Mar
MOQ : 1
Multiples : 1
1 : USD 0.2012
10 : USD 0.1025
100 : USD 0.0562
1000 : USD 0.0484
3000 : USD 0.0341
6000 : USD 0.033
24000 : USD 0.0308

222
Ship by Thu. 20 Mar to Mon. 24 Mar
MOQ : 1
Multiples : 1
1 : USD 0.238
5 : USD 0.168
10 : USD 0.1386
50 : USD 0.0868
100 : USD 0.0714

1467
Ship by Mon. 24 Mar to Fri. 28 Mar
MOQ : 1513
Multiples : 1
1513 : USD 0.044

2910
Ship by Mon. 24 Mar to Fri. 28 Mar
MOQ : 3000
Multiples : 3000
3000 : USD 0.0376
6000 : USD 0.0268

357930
Ship by Mon. 24 Mar to Fri. 28 Mar
MOQ : 6000
Multiples : 3000
6000 : USD 0.0342

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N7002E-7-F from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002E-7-F and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

1. The 2N7002E-7-F is a transistor produced by Diodes Incorporated. It is a general-purpose N-Channel Enhancement Mode Field Effect Transistor (FET). 2. This device has a low-on resistance of 6.0ohm and a low drain to source breakdown voltage of 7V. It is suitable for use in a variety of applications such as switching, level shifting, and small signal amplification. It is housed in a small SOT-23 surface-mount package and is lead-free and RoHS compliant.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

DIO may also be referenced as

Diodes
DIODES INC
DIODES INC / ZETEX
DIODES INC.
Diodes Inc. / Pericom
Diodes Zetex
DiodesZetex
PAM(Diodes Inc)
PER
Pericom
PERICOM SEMI
Pericom Semiconductor
Pericom Technology
Pericom/Diodes
ZTX

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