About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

MOSFET

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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
Hot IRLR3110ZTRLPBF


Trans MOSFET N-CH Si 100V 63A 3-Pin(2+Tab) DPAK T/R
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Infineon Availability : 41489
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USD 0.9092
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           Tape And Reel    Enhancement  
BSS84P H6433


Infineon Technologies MOSFET P-Ch -60V -170mA SOT-23-3
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Infineon Availability : 40986
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USD 0.0471
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- 170 mA- 60 V8 OhmsP - Channel - 1.5 V- 55 C+ 150 C360 mWSmd/SmtPG - SOT - 23Reel-1 Channel+/- 20 V1 nCEnhancement  
BSV236SPH6327XTSA1


Transistor: P-MOSFET; unipolar; -20V; -1.5A; 0.56W; PG-SOT-363
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Infineon Availability : 40740
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USD 0.115
Multiples of: 3000

            Optimos P      
Hot IRFR5505TRPBF


MOSFET P Trench 55V 18A 4V @ 250uA 110 mΩ @ 9.6A,10V TO-252-2 (DPAK) RoHS
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Infineon Availability : 40496
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USD 0.2626
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18 A55 V110 mOhmsP - Channel 4 V- 55 C+ 150 C57 WSmd/SmtDPAKReelSi1 Channel20 V32 nCEnhancement  
Hot IRFS4227TRLPBF


MOSFET N Trench 200V 62A (Tc) 5V @ 250uA 26 mΩ @ 46A,10V TO-263-2 RoHS
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Infineon Availability : 40389
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USD 0.9771
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62 A200 V26 mOhmsN - Channel  - 40 C+ 175 C330 WSmd/SmtD2PAKReelSi1 Channel30 V70 nCEnhancement  
Hot IRF640NPBF


MOSFET N Trench 200V 18A 4V @ 250uA 150 mΩ @ 11A,10V TO-220 (TO-220-3) RoHS
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Infineon Availability : 39978
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USD 0.2357
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18 A200 V150 mOhmsN - Channel  - 55 C+ 175 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V44.7 nCEnhancement  
BSC0904NSI


MOSFET N-Ch 30V 78A TDSON-8 OptiMOS
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Infineon Availability : 39900
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USD 0.3628
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78 A30 V3.7 mOhmsN - Channel  - 55 C+ 150 C37 WSmd/SmtTDSON - 8ReelSi1 Channel20 V17 nC  Optimos
BSS209PW H6327


Infineon Technologies MOSFET P-Ch -20V -630mA SOT-323-3
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Infineon Availability : 39555
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USD 0.0426
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630 mA20 V550 mOhmsP - Channel 600 mV- 55 C+ 150 C300 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4.5 V- 1.0 nCEnhancement  
AUIRFR4620TRL


MOSFET AUTO 200V 1 N-CH HEXFET 78mOhms
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Infineon Availability : 39528
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USD 1.6445
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           Cut Tape       
IRLR3705ZTRPBF


Transistor: N-MOSFET; unipolar; 55V; 89A; 130W; DPAK
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Infineon Availability : 1698
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USD 0.6268
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89 A55 V8 mOhmsN - Channel 3 V + 175 C130 WSmd/SmtDPAKReelSi1 Channel 66 nC   
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