PD - 97175B IRLR3110ZPbF IRLU3110ZPbF Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance D 175C Operating Temperature Fast Switching V = 100V DSS Repetitive Avalanche Allowed up to Tjmax G Description R = 14m DS(on) Specifically designed for Industrial applications, this HEXFET Power MOSFET utilizes the latest S processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com- bine to make this design an extremely efficient and reliable device for use in Industrial applications and a wide variety of other applications. D-Pak I-Pak IRLR3110ZPbF IRLU3110ZPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C (Silicon Limited) 63 D C Continuous Drain Current, V 10V GS I T = 100C 10V (Silicon Limited) 45 A D C Continuous Drain Current, V GS I T = 25C 42 Continuous Drain Current, V 10V (Package Limited) D C GS I 250 DM Pulsed Drain Current P T = 25C 140 W D C Power Dissipation Linear Derating Factor 0.95 W/C V 16 V GS Gate-to-Source Voltage E AS (Thermally limited) 110 mJ Single Pulse Avalanche Energy E (Tested ) 140 AS Single Pulse Avalanche Energy Tested Value I AR See Fig.12a, 12b, 15, 16 A Avalanche Current E mJ AR Repetitive Avalanche Energy T -55 to + 175 Operating Junction and J T C STG Storage Temperature Range Reflow Soldering Temperature, for 10 seconds 300 Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R JC 1.05 Junction-to-Case R 40 C/W JA Junction-to-Ambient (PCB mount) R JA 110 Junction-to-Ambient www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.077 V/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 11 14 V = 10V, I = 38A GS D 12 16 V = 4.5V, I = 32A GS D V Gate Threshold Voltage 1.0 2.5 V V = V , I = 100A GS(th) DS GS D gfs Forward Transconductance 52 S V = 25V, I = 38A DS D I DSS Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DS GS 250 V = 100V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 200 nA V = 16V GSS GS Gate-to-Source Reverse Leakage -200 V = -16V GS Q g Total Gate Charge 34 48 I = 38A D Q gs Gate-to-Source Charge 10 nC V = 50V DS Q Gate-to-Drain Mille) Charge 15 V = 4.5V gd GS t d(on) Turn-On Delay Time 24 V = 50V DD t r Rise Time 110 I = 38A D t d(off) Turn-Off Delay Time 33 ns R = 3.7 G t Fall Time 48 V = 4.5V f GS D L D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) G L S Internal Source Inductance 7.5 from package S and center of die contact C iss Input Capacitance 3980 V = 0V GS C oss Output Capacitance 310 V = 25V DS C rss Reverse Transfer Capacitance 130 pF = 1.0MHz C Output Capacitance 1820 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 170 V = 0V, V = 80V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 320 V = 0V, V = 0V to 80V GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current 63 MOSFET symbol S (Body Diode) A showing the G I Pulsed Source Current 250 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage1.3V T = 25C, I = 38A, V = 0V SD J S GS t Reverse Recovery Time 3451ns T = 25C, I = 38A, V = 50V rr DD J F Q di/dt = 100A/s Reverse Recovery Charge 42 63 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com