AUTOMOTIVE GRADE AUIRFR4620 Features HEXFET Power MOSFET Advanced Process Technology V 200V DSS Ultra Low On-Resistance R typ. 64m DS(on) Dynamic dV/dT Rating max. 78m 175C Operating Temperature I 24A D Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * D Description S Specifically designed for Automotive applications, this HEXFET G Power MOSFET utilizes the latest processing techniques to D-Pak achieve extremely low on-resistance per silicon area. Additional AUIRFR4620 features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient G D S and reliable device for use in Automotive applications and a wide Gate Drain Source variety of other applications. Standard Pack Base part number Package Type Orderable Part Number Form Quantity Tube 75 AUIRFR4620 AUIRFR4620 D-Pak Tape and Reel Left 3000 AUIRFR4620TRL Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 24 D C GS I T = 100C Continuous Drain Current, V 10V 17 A D C GS I Pulsed Drain Current 100 DM P T = 25C Maximum Power Dissipation 144 W D C Linear Derating Factor 0.96 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy (Thermally Limited) 113 mJ AS I Avalanche Current See Fig. 14, 15, 22a, 22b A AR E Repetitive Avalanche Energy mJ AR dv/dt Pead Diode Recovery dv/dt 54 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.045 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA HEXFET is a registered trademark of Infineon. *Qualification standards can be found at www.infineon.com 1 2015-12-1 AUIRFR4620 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.23 V/C Reference to 25C, I = 5mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 64 78 mV = 10V, I = 15A DS(on) GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 100A GS(th) DS GS D gfs Forward Trans conductance 37 S V = 50V, I = 15A DS D R Internal Gate Resistance 2.6 G(Int) 20 V = 200V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 200V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic Electrical Characteristics T = 25C (unless otherwise specified) J Q Total Gate Charge 25 38 I = 15A g D Q Gate-to-Source Charge 8.2 V = 100V gs DS nC Q Gate-to-Drain Charge 7.9 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q) 17 sync g gd t Turn-On Delay Time 13.4 V = 130V d(on) DD t Rise Time 22.4 I = 15A r D ns t Turn-Off Delay Time 25.4 R = 7.3 d(off) G t Fall Time 14.8 V = 10V f GS C Input Capacitance 1710 V = 0V iss GS C Output Capacitance 125 V = 50V oss DS C Reverse Transfer Capacitance 30 pF = 1.0MHz rss C (ER) Effective Output Capacitance (Energy Related) 113 V = 0V, V = 0V to 160V oss eff. GS DS C (TR) Effective Output Capacitance (Time Related) 317 V = 0V, V = 0V to 160V oss eff. GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 24 S (Body Diode) showing the A Pulsed Source Current integral reverse I 100 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 15A,V = 0V SD J S GS t Reverse Recovery Time 78 T = 25C rr J ns 99 T = 125C V = 100V, J R Q Reverse Recovery Charge 294 T = 25C I = 15A rr J F nC 432 T = 125C di/dt = 100A/s J 7.6 A T = 25C J Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T starting T = 25C, L = 1.0mH, R = 25 , I = 15A, V =10V. Part not recommended for use above this value. Jmax , J G AS GS I 15A, di/dt 634A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C . (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss eff oss DS DSS C . (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss eff oss DS DSS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994 R is measured at T approximately 90C. J 2 2015-12-1