About MOSFET

Infineon MOSFET

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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  Id - Continuous Drain Current
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  Vds - Drain-source Breakdown Voltage
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  Rds On - Drain-source Resistance
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  Transistor Polarity
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  Vgs - Gate-source Breakdown Voltage
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  Vgs Th - Gate-source Threshold Voltage
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  Minimum Operating Temperature
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  Maximum Operating Temperature
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  Pd - Power Dissipation
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  Mounting Style
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  Package / Case
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  Packaging
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  Technology
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  Number Of Channels
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  Vgs - Gate-source Voltage
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  Qg - Gate Charge
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  Channel Mode
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  Qualification
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  Tradename
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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP2907PBF


MOSFET N Trench 75V 209A 4V @ 250uA 4.5 mΩ @ 125A,10V TO-247 (AC) RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 37442
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USD 2.6

Multiples of: 25

209 A75 V4.5 mOhmsN - Channel  - 55 C+ 175 C330 WThrough HoleTO - 247ACTubeSi1 Channel20 V410 nCEnhancement  
BSZ160N10NS3 G


MOSFET N-Ch 100V 40A TSDSON-8 OptiMOS 3
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 37034
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USD 0.7285

Multiples of: 1

40 A100 V14 mOhmsN - Channel 2 V- 55 C+ 150 C63 WSmd/SmtTSDSON - 8ReelSi1 Channel20 V25 nCEnhancement Optimos
IRFB7537PBF


Transistor: N-MOSFET; unipolar; 60V; 173A; 230W; TO220AB
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Infineon Availability : 36859
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USD 0.4752

Multiples of: 1

173 A60 V2.75 mOhmsN - Channel20 V3.7 V- 55 C+ 175 C230 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V142 nC  Strongirfet
IRLZ34NSTRLPBF


N-Channel 55 V 30A (Tc) 3.8W (Ta), 68W (Tc) Surface Mount D2PAK
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Infineon Availability : 36472
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USD 0.4697

Multiples of: 800

30 A55 V60 mOhmsN - Channel    68 WSmd/SmtD2PAKReelSi1 Channel16 V16.7 nC   
BSS83P H6327


Infineon Technologies MOSFET P-Ch SOT-23-3
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Infineon Availability : 36023
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USD 0.0863

Multiples of: 1

330 mA60 V3 OhmsP - Channel 1 V- 55 C+ 150 C360 mWSmd/SmtSOT - 23 - 3-Si1 Channel- 4.5 V2.38 nCEnhancementAec - Q101 
BSP317P H6327


Infineon Technologies MOSFET P-Ch -250V -430mA SOT-223-3
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Infineon Availability : 35831
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USD 0.3286

Multiples of: 1

430 mA250 V3 OhmsP - Channel 2 V- 55 C+ 150 C1.8 WSmd/SmtSOT - 223 - 4Reel-1 Channel20 V- 15.1 nCEnhancement  
BSS123N H6433


Infineon Technologies MOSFET N-Ch 100V 190mA SOT-23-3
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Infineon Availability : 35375
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USD 0.0522

Multiples of: 1

190 mA100 V2.4 OhmsN - Channel 800 mV- 55 C+ 150 C500 mW (1/2 w)Smd/SmtSOT - 23 - 3ReelSi1 Channel20 V900 pCEnhancement  
IRFZ48NSTRLPBF


Transistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK
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Infineon Availability : 35317
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USD 0.7222

Multiples of: 1

64 A55 V14 mOhmsN - Channel 4 V- 55 C+ 175 C3.8 WSmd/SmtD2PAKReelSi1 Channel20 V81 nC   
IPD135N03LG


Transistor: N-MOSFET; unipolar; 30V; 21A; 31W; PG-TO252-3
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Infineon Availability : 2791
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USD 0.2814

Multiples of: 1

30 A30 V13.5 mOhmsN - Channel20 V - 55 C+ 175 C31 WSmd/SmtDPAK - 3Reel    Enhancement Optimos
IRLR2705TRPBF


Transistor: N-MOSFET; unipolar; 55V; 28A; 68W; DPAK
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon Availability : 230
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USD 0.2983

Multiples of: 1

28 A55 V65 mOhmsN - Channel 2 V- 55 C+ 175 C46 WSmd/SmtDPAKReelSi1 Channel16 V16.7 nCEnhancement  
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