MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOS Power-Transistor, 100V OptiMOS 3 Power Transistor BSZ160N10NS3 Data Sheet Rev. 2.1 Final Power Management & MultimarketBSZ160N10NS3 G TM OptiMOS 3 Power-Transistor Product Summary Features V 100 V DS Ideal for high frequency switching R 16 mW DS(on),max Optimized technology for DC/DC converters I 40 A D Excellent gate charge x R product (FOM) DS(on) PG-TSDSON-8 N-channel, normal level 100% avalanche tested Pb-free plating RoHS compliant 1) Qualified according to JEDEC for target applications Halogen-free according to IEC61249-2-21 Type Package Marking BSZ160N10NS3 G PG-TSDSON-8 160N10N Maximum ratings, at T =25 C, unless otherwise specified A Parameter Symbol Conditions Value Unit I V =10 V, T =25C Continuous drain current 40 A D GS C V =10 V, T =100C 28 GS C V =10 V, T =25C, GS A 8 2) R =60K/W thJA 3) I T =25C 160 Pulsed drain current D,pulse C 4) E I =20A, R =25W 80 mJ Avalanche energy, single pulse AS D GS Gate source voltage V 20 V GS 1) J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information Rev. 2.1 page 1 2015-09-17